Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY
11788
USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
PROCESS
CP704
Small Signal Transistors
PNP - High Current Transistor Chip
PRINCIPAL DEVICE TYPES
MPSA55
MPSA56
GEOMETRY
PROCESS DETAILS
R1 (15 -April 2005)
BACKSIDE COLLECTOR
Process
EPITAXIAL PLANAR
Die Size
22 x 22 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
3.7 X 3.7 MILS
Emitter Bonding Pad Area
4.2 X 4.2 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
GROSS DIE PER 4 INCH WAFER
23,450
Central
Semiconductor Corp.
TM
PROCESS
CP704
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY
11788
USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
R1 (15 -April 2005)
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ZIP