(SEE REVERSE SIDE)
R1
CS55B
CS55D
SILICON CONTROLLED RECTIFIER
0.8 AMPS, 200 AND 400 VOLTS
TO-92 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed
for applications requiring a low gate sensitivity.
MAXIMUM RATINGS (TA=25C unless otherwise noted)
SYMBOL CS55B
CS55D
UNITS
Peak Repetitive Off-State Voltage
VDRM,VRRM
200
400
V
RMS On-State Current (TC=60oC)
IT(RMS)
0.8
A
Peak One Cycle Surge (t=10ms)
ITSM
10
A
I2t Value for Fusing (t=10ms)
I2t
0.24
A2s
Peak Gate Power (tp=10
s)
PGM
2.0
W
Average Gate Power Dissipation
PG(AV)
0.1
W
Peak Gate Current (tp=10
s)
IGM
1.0
A
Peak Gate Voltage (tp=10
s)
VGM
8.0
V
Storage Temperature
Tstg
-40 to +125
C
Junction Temperature
TJ
-40 to +125
C
Thermal
Resistance
JA
200
C/W
Thermal
Resistance
JC
100
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
IDRM,IRRM Rated VDRM,VRRM, RGK=1K
1.00
A
IDRM,IRRM Rated VDRM,VRRM, RGK=1K, TC=125C
100
A
IGT
VD=12V
200
A
IH
RGK=1K
5.00
mA
VGT
VD=12V
0.8
V
VTM
ITM=1.0A
1.70
V
dv/dt
VD=.67 x VDRM, RGK=1K, TC=125C
25
V/
s
CS55B / CS55D
SILICON CONTROLLED RECTIFIER
RMS ON-STATE CURRENT vs. CASE
TEMPERATURE
0
0.2
0.4
0.6
0.8
1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (C)
I
T
(RMS), RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE
CHARACTERISTICS
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
V
TM
, ON-STATE VOLTAGE (V)
I
TM
, ON-STATE CURRENT (A)
T
C
=125C
T
C
=25C
TO-92 PACKAGE - MECHANICAL OUTLINE
R1
G
A
B
F
E
I
H
C
D
1 2 3
MIN
MAX
MIN
MAX
A (DIA)
0.175
0.205
4.45
5.21
B
0.170
0.210
4.32
5.33
C
0.500
-
12.70
-
D
0.016
0.022
0.41
0.56
E
F
G
0.125
0.165
3.18
4.19
H
0.080
0.105
2.03
2.67
I
TO-92 (REV: R1)
Lead Code:
1) Anode
2) Gate
3) Cathode
0.015
0.38
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
0.100
2.54
0.050
1.27
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