MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
CXTA42
CXTA92
UNITS
Collector-Base Voltage
VCBO
300
300
V
Collector-Emitter Voltage
VCEO
300
300
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
500
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
104
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CXTA42
CXTA92
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=200V
100
250
nA
IEBO
VBE=6.0V
100
-
nA
IEBO
VBE=3.0V
-
100
nA
BVCBO
IC=100mA
300
300
V
BVCEO
IC=1.0mA
300
300
V
BVEBO
IE=100
A
6.0
5.0
V
VCE(SAT)
IC=20mA, IB=2.0mA
0.5
0.5
V
VBE(SAT)
IC=20mA, IB=2.0mA
0.9
0.9
V
hFE
VCE=10V, IC=1.0mA
25
25
hFE
VCE=10V, IC=10mA
40
40
hFE
VCE=10V, IC=30mA
40
25
fT
VCE=20V, IC=10mA, f=100MHz
50
50
MHz
Cob
VCB=20V, IE=0, f=1.0MHz
3.0
6.0
pF
CXTA42 NPN
CXTA92 PNP
SURFACE MOUNT
SILICON HIGH VOLTAGE TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R4 (14-November 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA42,
CXTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage applications.
MARKING CODE: FULL PART NUMBER
A
C
E
G
F
H
J
K
M
L
B
R3
1
3
2
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXTA42 NPN
CXTA92 PNP
SURFACE MOUNT
SILICON HIGH VOLTAGE TRANSISTOR
R4 (14-November 2002)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
BOTTOM VIEW
PDF 
ZIP