www.docs.chipfind.ru
Page 1
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0.1
)
.122 (3.1)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (
0
.17
5)
.0
45 (
1
.15)
.110 (2.8)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
www.comchip
tech.com
COMCHIP
General Purpose Transistor (PNP)
MMBT2907A
Ideal for Medium Power Amplification and Switching
COLLECTOR
3
1
BASE
2
EMITTER
Rating
Symbol
2907
2907A
Unit
Collector Emitter Voltage
VCEO
40
60
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
MDS030300B1
www.comchip
tech.com
COMCHIP
COMCHIP
General Purpose Transistor (PNP)
Page 2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3)
(IC = 10 mAdc, IB = 0)
MMBT2907
MMBT2907A
V(BR)CEO
40
60
--
--
Vdc
Collector Base Breakdown Voltage (IC = 10
m
Adc, IE = 0)
V(BR)CBO
60
--
Vdc
Emitter Base Breakdown Voltage (IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0.5 Vdc)
ICEX
--
50
nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MMBT2907
MMBT2907A
(VCB = 50 Vdc, IE = 0, TA = 125
C)
MMBT2907
MMBT2907A
ICBO
--
--
--
--
0.020
0.010
20
10
Adc
Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc)
IB
--
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 1.0 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 10 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 150 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
hFE
35
75
50
100
75
100
--
100
30
50
--
--
--
--
--
--
--
300
--
--
--
Collector Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.4
1.6
Vdc
Base Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
--
--
1.3
2.6
Vdc
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
1.FR-5 = 1.0 X 0.75 X 0.062 in.
MDS030300B1
www.comchip
tech.com
COMCHIP
General Purpose Transistor (PNP)
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (3),(4)
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
ton
--
45
Delay Time
(VCC = 30 Vdc, IC = 150 mAdc,
I
= 15 mAdc
td
--
10
ns
Rise Time
IB1 = 15 mAdc)
tr
--
40
TurnOff Time
toff
--
100
Storage Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
I
= I
= 15 mAdc
ts
--
80
ns
Fall Time
IB1 = IB2 = 15 mAdc)
tf
--
30
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
0
16 V
200 ns
50
1.0 k
200
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
+15 V
6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
Page 3
MDS030300B1
www.comchip
tech.com
COMCHIP
General Purpose Transistor (PNP)
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
3.0
0.2
0.1
TJ = 125
C
25
C
55
C
VCE = 1.0 V
VCE = 10 V
h
FE
, Normalized Current
Gain
2.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
200
300
500
Figure 4. Collector Saturation Region
IB, Base Current (mA)
0.4
0.6
0.8
1.0
0.2
V , CollectorEmitter
Voltage
(V)
0
CE
IC = 1.0 mA
0.005
10 mA
0.01
100 mA
500 mA
0.02 0.03 0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
Figure 5. TurnOn Time
IC, Collector Current
300
5.0
Figure 6. TurnOff Time
IC, Collector Current (mA)
5.0
t, Time
(ns)
t, Time
(ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
7.0 10
20 30
50 70 100
200 300
500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 10
TJ = 25
C
500
300
100
70
50
30
20
10
7.0
5.0
7.0 10
20 30
50 70 100
200 300 500
200
tf
t
s = ts 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
Page 4
MDS030300
MDS030300B1
Page
5
www.comchip
tech.com
COMCHIP
General Purpose Transistor (PNP)
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25
C
Figure 7. Frequency Effects
f, Frequency (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, Source Resistance (OHMS)
NF
, Noise Figure (dB)
NF
,
Noise Figure (dB)
f = 1.0 kHz
IC = 50
A
100
A
500
A
1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
10
8.0
6.0
4.0
2.0
0
50
100
200
500 1.0 k
2.0 k
5.0 k 10 k
20 k
50 k
IC = 1.0 mA, Rs = 430
500
A, Rs = 560
50
A, Rs = 2.7 k
100
A, Rs = 1.6 k
Figure 9. Capacitances
Reverse Voltage (VOLTS)
30
Figure 10. CurrentGain -- Bandwidth Product
IC, Collector Current (mA)
C, Capacitance
(pF)
0.1
2.0
Figure 11. "On" Voltage
IC, Collector Current (mA)
1.0
Figure 12. Temperature Coefficients
IC, Collector Current (mA)
V
, Voltage
(V
)
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
R
q
VC for VCE(sat)
f T
, CurrentGain -- Bandwidth Product (MHz)
Coefficient (mV/
C)
20
10
7.0
5.0
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
400
300
200
100
80
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
0.8
0.6
0.4
0.2
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
Ceb
Ccb
VCE = 20 V
TJ = 25
C
R
q
VB for VBE
MDS030300B1
PDF 
ZIP