MMBT3906
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
General Purpose Transistor (PNP)
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COMCHIP
MDS030600
2
A
Page 1
PNP Silicon Type
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.056 (
1
.4
0)
3
1
2
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
40
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
MDS030600
2
A
Page 2
COMCHIP
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General Purpose Transistor
General Purpose Transistor
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
40
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
--
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
--
50
nAdc
1. FR 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Width
300
s, Duty Cycle
2.0%.
REM : Thermal Clad is a trademark of the Bergquist Company.
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
ON CHARACTERISTICS(3)
Symbol
Min
Max
Unit
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
HFE
60
80
100
60
30
--
--
300
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
--
--
0.25
0.4
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
--
0.85
0.95
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
250
--
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
10
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2.0
12
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
10
X 10 4
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
100
400
--
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
3.0
60
m
mhos
Noise Figure
(IC = 100
m
Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)
NF
--
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
I = 10 mAdc, I
= 1.0 mAdc)
td
--
35
ns
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
--
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
I
= I
= 1.0 mAdc)
ts
--
225
ns
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
tf
--
75
ns
3.Pulse Test: Pulse Width i 300 is, Duty Cycle i 2.0%.
MDS030600
2
A
Page 3
COMCHIP
www.comchiptech.com
General Purpose Transistor
General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
Duty Cycle = 2%
< 1 ns
+9.1 V
10.9 V
Duty Cycle = 2%
t1
0
10 < t1 < 500
m
s
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
Reverse Bias (V)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, Collector Current (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, Charge
(pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Capacitance
(pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25
C
TJ = 125
C
Figure 5. Turn On Time
IC, Collector Current (mA)
70
100
200
300
500
50
Time (ns)
1.0
2.0 3.0
10
20
70
5
100
Figure 6. Fall Time
IC, Collector Current (mA)
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
t , F
a
l
l
Time (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
MDS030600
2
A
Page 4
COMCHIP
www.comchiptech.com
General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25
C, Bandwidth = 1.0 Hz)
Figure 7.
f, Frequency (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, Source Resistance (k OHMS)
0
NF
, Noise Figure (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, Noise Figure (dB)
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50
m
A
IC = 100
m
A
SOURCE RESISTANCE = 200
W
IC = 1.0 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100
m
A
SOURCE RESISTANCE = 2.0 k
IC = 50
m
A
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C)
Figure 9. Current Gain
IC, Collector Current (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, Collector Current (mA)
h , DC Current
Gain
h , Output
Admittance
( mhos)
Figure 11. Input Impedance
I C, Collector Current (mA)
Figure 12. Voltage Feedback Ratio
IC, Collector Current (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , Volt
age
Feedback Ratio
(X 10 )
re
h , Input
Impedance (k OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
4
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
MDS030600
2
A
Page 5
COMCHIP
www.comchiptech.com
General Purpose Transistor
General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC Current
Gain (Normalized)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125
C
+25
C
55
C
Figure 14. Collector Saturation Region
IB, Base Current (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , Collector
Emitter Voltage
(V)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 15. "ON" Voltages
IC, Collector Current (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, Collector Current (mA)
V
, Voltage
(V)
1.0
2.0
5.0
10
20
50
0
100
0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
1.0
1.5
2.0
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
C TO +125
C
55
C TO +25
C
+25
C TO +125
C
55
C TO +25
C
q
VC FOR VCE(sat)
q
VB FOR VBE(sat)
,
Temperature
Coefficients (mV/ C)
V
q
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