CYStech Electronics Corp.
Spec. No. : C203A3
Issued Date : 2003.06.06
Revised Date : 2005.03.09
Page No. : 1/4
2N4401A3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
2N4401A3
Description
The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching
application.
High current , I
C
= 0.6A
Low V
CE(sat)
, V
CE(sat)
= 0.2V(typ.) at I
C
/I
B
= 500mA/50mA
Optimal for low Voltage operation
Complementary to 2N4403A3
.
Pb-free package
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
0.6
A
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
2N4401A3
TO-92
BBase
CCollector
EEmitter
E B C
CYStech Electronics Corp.
Spec. No. : C203A3
Issued Date : 2003.06.06
Revised Date : 2005.03.09
Page No. : 2/4
2N4401A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
60 - - V
I
C
=100A
BV
CEO
40 - - V
I
C
=1mA
BV
EBO
6 - - V
I
E
=10A
I
CEX
- - 100
nA
V
CE
=35V, V
BE
=-0.4V
*V
CE(sat)
1 -
- 0.4 V
I
C
=150mA, I
B
=15mA
*V
CE(sat)
2 - 0.2 0.75 V
I
C
=500mA, I
B
=50mA
*V
BE(sat)
1 -
- 0.95 V
I
C
=150mA, I
B
=15mA
*V
BE(sat)
2 -
- 1.2 V
I
C
=500mA, I
B
=50mA
*h
FE
1
20 - - -
V
CE
=1V, I
C
=0.1mA
*h
FE
2
40 - - -
V
CE
=1V, I
C
=1mA
*h
FE
3
80 - - -
V
CE
=1V, I
C
=10mA
*h
FE
4 82 - 390 -
V
CE
=1V, I
C
=150mA
*h
FE
5
40 - - -
V
CE
=2V, I
C
=500mA
f
T
-
250
-
MHz
V
CE
=5V, I
C
=20mA, f=100MHz
Cob - 6 - pF
V
CB
=5V, f=1MHz
*Pulse Test: Pulse Width
380
s, Duty Cycle
2%
Classification Of h
FE
4
Rank P Q R
Range 82~180 120~270
180~390
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Current Gain---
HFE
HFE@VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
CYStech Electronics Corp.
Spec. No. : C203A3
Issued Date : 2003.06.06
Revised Date : 2005.03.09
Page No. : 3/4
2N4401A3
CYStek Product Specification
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current--- IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=5V
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C203A3
Issued Date : 2003.06.06
Revised Date : 2005.03.09
Page No. : 4/4
2N4401A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142
0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
2N
4401
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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