CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 1/4
BAS21N3
CYStek Product Specification
High voltage switching diode
BAS21N3
Description
The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small
SOT-23 plastic SMD package.
Features
Fast switching speed : max. 50ns
Small plastic SMD package
General application.
Continuous reverse voltage : max. 200V
Repetitive peak reverse voltage : max. 250V
Repetitive peak forward current : max. 625mA
Applications
General purpose switching in e.g. surface mounted circuits.
Symbol Outline
SOT-23
BAS21N3
1Anode
2Not Connected
3Cathode
Anode
Cathode
1
2
3
Not Connected
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 2/4
BAS21N3
CYStek Product Specification
Absolute Maximum Ratings
@T
A
=25
Parameter Symbol
Min
Max
Unit
Repetitive peak reverse voltage
V
RRM
- 250
V
Continuous reverse voltage
V
R
-
200
V
Continuous forward current
I
F
-
200
mA
Repetitive peak forward current
I
FRM
625
mA
Non-repetitive peak forward current
@square wave, Tj=25 prior to surge t=1s
t=100s
t=10ms
I
FSM
-
-
-
9
3
1.7
A
A
A
Total power dissipation(
Note 1
) Ptot
250
mW
Junction Temperature
T
j
-
150
C
Storage Temperature
T
stg
-65
+150
C
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics
@ Tj=25 unless otherwise specified
Parameters Symbol Conditions Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
=100mA
I
F
=200mA
- -
1
1.25
V
V
Reverse current
I
R
V
R
=200V
V
R
=200V,Tj=150
- -
100
100
nA
A
Diode capacitance
Cd
V
R
=0V, f=1MHz
-
-
5
pF
Reverse recovery time
trr
when switched from I
F
=30mA to
I
R
=30mA,R
L
=100, measured
at I
R
=3mA
- - 50
ns
Thermal Characteristics
Symbol Parameter Conditions
Value
Unit
Rth,j-tp
thermal resistance from junction to tie-point
330
/W
Rth, j-a
thermal resistance from junction to ambient
Note 1
500
/W
Note 1: Device mounted on an FR-4 PCB.
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 3/4
BAS21N3
CYStek Product Specification
Characteristic Curves
Forward Characteristics
0.01
0.1
1
10
100
1000
0
1
2
Instantaneous Forward Voltage---V
F
(V)
Instantaneous Forward Current---I
F
(mA)
Reverse Leakage Current vs Junction Temperature
0.01
0.1
1
10
100
0
100
200
Junction Temperature---Tj()
Reverse Leakage Current---I
R
(A)
Power Derating Curve
0
50
100
150
200
250
300
0
50
100
150
200
Ambient Temperature---T
A
()
Power Dissipation---P
D
(mW)
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 4/4
BAS21N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style:Pin.1. Anode 2. Not Connected
3.Cathode
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
JS
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