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Электронный компонент: DS2064

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DS2064
8K x 8 Static RAM
DS2064
022598 1/9
FEATURES
Low power CMOS design
Standby current
50 nA max at t
A
= 25
C V
CC
= 3.0V
100 nA max at t
A
= 25
C V
CC
= 5.5V
1
A max at t
A
= 60
C V
CC
= 5.5V
Full operation for V
CC
= 4.5V to 5.5V
Data Retention Voltage = 5.5V to 2.0V
Access time equals 200 ns at 5.0V
Operating temperature range of 40
C to +85
C
Full static operation
TTL compatible inputs and outputs
Available in 28pin DIP and 28pin SOIC packages
Suitable for both battery operated and battery backup
applications
PIN ASSIGNMENT
V
CC
WE
CE2
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
DS2064200 28PIN DIP (600 MIL)
DS2064S200 28PIN SOIC (330 MIL)
PIN DESCRIPTION
A0A12
Address Inputs
DQ0DQ7
Data Input/Output
CE1, CE2
Chip Enable Inputs
WE
Write Enable Input
OE
Output Enable Input
V
CC
5V Power Supply Input
GND
Ground
NC
No Connection
DESCRIPTION
The DS2064 is a 65536bit low power, fully static ran-
dom access memory organized as 8192 words by eight
bits using CMOS technology. The device operates from
a single power supply with a voltage input between 4.5V
and 5.5V. The chip enable inputs (CE1 and CE2) are
used for device selection and can be used in order to
achieve the minimum standby current mode, which fa-
cilitates both battery operate and battery backup appli-
cations. The device provides fast access time of 200 ns
and is most suitable for low power applications where
battery operation or battery backup for nonvolatility are
required. The DS2064 is a JEDECstandard 8K x 8
SRAM and is pincompatible with ROM and EPROM of
similar density.
DS2064
022598 2/9
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
V
CC
Power Supply Voltage
0.3V to +7.0V
V
IN
, V
I/O
Input, Input/Output Voltage
0.3 to V
CC
+ 0.3V
T
STG
Storage Temperature
55
C to +125
C
T
OPR
Operating Temperature
40
C to +85
C
T
SOLDER
Soldering Temperature/Time
260
C for 10 seconds
RECOMMENDED DC OPERATING CONDITIONS
(t
A
= 40
C to +85
C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Power Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.0
V
CC
+ 0.3
V
Input Low Voltage
V
IL
0.3
0.8
V
Data Retention Voltage
V
DR
2.0
5.5
V
DC CHARACTERISTICS
(t
A
= 40
C to +85
C; V
CC
=5V
10%)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Leakage Current
I
IL
0V < V
IN
< V
CC
+0.1
A
I/O Leakage Current
I
LO
CE1=V
IH,
0V<V
IO
<V
CC
+0.5
A
Output High Current
I
OH
V
OH
= 2.4V
1.0
mA
Output Low Current
I
OL
V
OL
= 0.4V
4.0
mA
Standby Current
I
CCS1
CE1 = 2.0V
0.5
mA
Standby Current
I
CCS2
CE1>V
CC
0.5V t
A
=60
C
1
A
Standby Current
I
CCS2
CE1>V
CC
0.5V t
A
=25
C
100
nA
Operating Current
I
CCO
CE1=0.8V, 200 ns cycle
70
mA
CAPACITANCE
(t
A
= 25
C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
C
IN
5
10
pF
Input/Output Capacitance
C
I/O
5
12
pF
DS2064
022598 3/9
AC CHARACTERISTICS, READ CYCLE
(t
A
= 40
C to +85
C; V
CC
=5V
10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Read Cycle Time
t
RC
200
ns
Access Time
t
ACC
200
ns
OE to Output Valid
t
OE
100
ns
CE to Output Valid
t
CO
200
ns
CE or OE to Output Active
t
COE
5
ns
Output to HighZ from
Deselection
t
OD
10
60
ns
Output Hold from Address
Change
t
OH
5
ns
AC CHARACTERISTICS, WRITE CYCLE
(t
A
= 40
C to +85
C; V
CC
=5V
10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Write Cycle Time
t
WC
200
ns
Write Pulse Width
t
WP
150
ns
Address Setup Time
t
AW
0
ns
Write Recovery Time
t
WR
10
ns
Output HighZ from WE
t
ODW
70
ns
7
Output Active from WE
t
OEW
5
ns
7
Data Setup Time
t
DS
80
ns
Data Hold Time
t
DH
0
ns
TIMING DIAGRAM: READ CYCLE
t
RC
t
ACC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t
OH
V
IH
t
OD
t
OD
V
IH
V
OH
V
OL
V
OH
V
OL
t
COE
t
COE
OUTPUT
DATA VALID
D
OUT
OE
ADDRESSES
V
IH
V
IH
t
OE
V
IL
V
IL
CE
t
CO
SEE NOTE 1
DS2064
022598 4/9
TIMING DIAGRAM: WRITE CYCLE 1
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESSES
t
AW
DATA IN STABLE
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
t
WP
t
WR
t
ODW
t
OEW
t
DS
t
DH
V
IH
V
IL
V
IH
V
IL
CE
WE
D
OUT
D
IN
SEE NOTES 2, 3, 4, 5, 6 AND 7
DS2064
022598 5/9
TIMING DIAGRAM: WRITE CYCLE 2
t
WC
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
ADDRESSES
CE
WE
D
OUT
D
IN
DATA IN STABLE
t
AW
t
WP
t
WR
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
t
COE
t
ODW
t
DS
t
DH
V
IL
V
IH
V
IL
V
IH
SEE NOTES 2, 3, 4, 5, 6 AND 7
TIMING DIAGRAM: DATA RETENTION POWER UP, POWER DOWN
DATA RETENTION MODE
V
CC
- 0.2V
V
CC
CE
GND
t
CDR
t
R
2.7V
V
IH
V
IL
SEE NOTE 8