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Электронный компонент: BC857BS

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DS30373 Rev. 1 - 2
1 of 3
BC857BS
www.diodes.com
BC857BS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current (Note 1)
I
C
-100
mA
Peak Collector Current (Note 1)
I
CM
-200
mA
Peak Base Current (Note 1)
I
BM
-200
mA
Power Dissipation at T
SB
= 50C (Note 1)
P
d
200
mW
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +125
C
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Case: SOT-363, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3W (See Page 3)
Weight: 0.006 grams
Mechanical Data
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
T
C
U
D
O
R
P
W
E
N
A
B C
E
2
B
2
E
1
C
2
B
1
C
1
J
D
H
K
F
M
L
TOP VIEW
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0
8
All Dimensions in mm
DS30373 Rev. 1 - 2
2 of 3
BC857BS
www.diodes.com
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain (Note 2)
h
FE
220
--
475
--
V
CE
= -5.0V, I
C
= -2.0mA
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
--
--
625
C/W
Note 1
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
--
--
--
-100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
--
-700
--
mV
I
C
= -10mA, I
B
= -0.5mA
Base-Emitter Voltage (Note 2)
V
BE
-580
-665
-750
mV
V
CE
= -5.0V, I
C
= -2.0mA
Collector Cutoff Current
I
CBO
I
CBO
--
--
--
-15
-4.0
nA
A
V
CB
= -30V, I
E
= 0
V
CB
= -30V, T
j
= 150C
Emitter Cutoff Current
I
EBO
--
--
-100
nA
V
EB
= -5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
--
3
pF
V
CB
= -10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
--
11
--
pF
V
EB
= -0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
T
C
U
D
O
R
P
W
E
N
0
50
100
150
200
250
0
100
200
P
,
POWER
D
ISSIP
A
TION
(mW)
d
T , AMBIENT TEMPERATURE (
C)
A
Fig. 1, Power Derating Curve
(see Note 1)
1
10
100
1000
10
100
1
h
D
C
C
URRENT
GAIN
FE,
I , COLLECTOR CURRENT (mA)
C
Fig. 2, DC Current Gain vs Collector Current
V
= -5V
CE
T = 25
C
A
T = -50
C
A
T = 150
C
A
0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
100
1000
V
,
COLLECT
OR
SA
TURA
TION
VOL
T
AGE
(V)
CE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Collector Saturation Voltage vs Collector Current
I / I = 20
C
B
T = 150
C
A
T = 25
C
A
T = -50
C
A
10
100
1000
1
10
100
f
,
GAIN
BANDWIDTH
P
RODUCT
(
MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Gain Bandwidth Product vs Collector Current
V
= -5V
CE
T = 25
C
A
DS30373 Rev. 1 - 2
3 of 3
BC857BS
www.diodes.com
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Date Code Key
K3W = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3W YM
K3WYM
Marking Information
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
BC857BS-7
SOT-363
3000/Tape & Reel
Ordering Information
(Note 3)
T
C
U
D
O
R
P
W
E
N