D
S11301 Rev. D-3 1 of 3 BS807
BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80s, duty cycle = 1%.
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
Characteristic
Symbol
Value
Unit
Max Forward Current (continuous)
I
F
0.3
A
Forward Voltage Drop (typ)
@ V
GS
= 0, I
F
= 0.3A, T
j
= 25C
V
F
0.85
V
Inverse Diode
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
200
V
Drain-Gate Voltage
V
DGS
200
V
Gate-Source Voltage (pulsed) (Note 2)
V
GS
20
V
Drain Current (continuous)
I
D
100
mA
Power Dissipation @ T
C
= 50C (Note 1)
P
d
310
mW
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-23, Plastic
Terminals: Solderable per
MIL-STD-202 Method 208
Pin Connection: See Diagram
Marking: S07
Weight: 0.008 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25C unless otherwise specified
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
D
S11301 Rev. D-3 2 of 3 BS807
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
V
(BR)DSS
200
230
--
V
I
D
= 100A, V
GS
= 0
Gate-Body Leakage Current
I
GSS
--
--
10
nA
V
GS
= 15V, V
DS
= 0
Drain-Source Cutoff Current
I
DSS
I
DSX
--
--
30
1.0
nA
A
V
DS
= 130V, V
GS
=0
V
DS
= 70V, V
GS
= 0.2V
Gate-Source Threshold Voltage
V
GS(th)
--
1.8
3.0
V
V
GS
= V
DS
, I
D
= 1.0mA
Drain-Source ON Resistance
r
DS(ON)
--
18
28
W
V
GS
= 2.8V, I
D
= 20 mA
Thermal Resistance, Junction to Substrate Backside
R
qJSB
--
--
320
K/W
Note 1
Thermal Resistance, Junction to Ambient Air
R
qJA
--
--
400
K/W
Note 1
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iss
C
oss
C
rss
--
58
8.0
1.5
--
pF
V
DS
= 20V,V
GS
= 0,f = 1.0 MHz
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5cm
2
area.
2. Pulse test: Pulse width = 80s, duty cycle = 1%.
@ T
A
= 25C unless otherwise specified
D
S11301 Rev. D-3 3 of 3 BS807
0
100
200
300
400
500
0
20
40
60
80
100
I
,
DRAIN
ON-CURRENT
(mA)
D(ON)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2, Output Characteristics
DS
T = 25 C
A
V
= 4V
GS
3.5
3
2.5
2
See Note 2
0
100
200
300
400
500
0
2
4
6
8
10
I
,
DRAIN
ON-CURRENT
(mA)
D(ON)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 3, Saturation Characteristics
DS
T = 25 C
A
V
= 4V
GS
3.5
3
2.5
2
See Note 2
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
I
,
DRAIN
CURRENT
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 4, Drain Current vs Gate-Source Voltage
GS
V
= 25V
DS
T = 25 C
A
See Note 2
0
100
200
300
400
500
0
1
2
3
4
5
g
,
TRANSCONDUCT
ANCE
(mm)
fs
V , GATE-SOURCE VOLTAGE (V)
Fig. 5, Transconductance vs Gate-Source Voltage
GS
V
= 25V
DS
See Note 2
0
100
200
300
400
500
0
100
200
P
,
POWER
DISSIP
A
TION
(mW)
d
T , SUBSTRATE TEMPERATURE ( C)
Fig. 1, Power Derating Curve
SB
See Note 1
0
100
200
300
400
500
0
100
200
g
,
TRANSCONDUCT
ANCE
(mm)
fs
I , DRAIN CURRENT (mA)
Fig. 6, Transconductance vs Drain Current
D
V
= 25V
DS
See Note 2
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