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Электронный компонент: BSS123W

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DS30368 Rev. 2 - 2
1 of 3
BSS123W
www.diodes.com
BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
100
V
Drain-Gate Voltage R
GS
20KW
V
DGR
100
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
Pulsed
I
D
I
DM
170
680
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-323, Molded Plastic
Plastic Material - UL Flammability Classification
Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K23 (See Page 3)
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
E
D
B
C
H
K
G
G
S
D
T
C
U
D
O
R
P
W
E
N
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
Source
Gate
Drain
DS30368 Rev. 2 - 2
2 of 3
BSS123W
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
100
V
V
GS
= 0V, I
D
= 250
mA
Zero Gate Voltage Drain Current
I
DSS
1.0
10
A
nA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage, Forward
I
GSSF
50
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
0.8
1.4
2.0
V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (ON)
6.0
10
W
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
Forward Transconductance
g
FS
80
370
mS
V
DS
= 10V, I
D
= 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage
V
SD
0.84
1.3
V
V
GS
= 0V, I
S
= 0.34A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
29
60
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
10
15
pF
Reverse Transfer Capacitance
C
rss
2
6
pF
SWITCHING CHARACTERISTICS
Turn-On Rise Time
t
r
8
ns
V
DD
= 30V, I
D
= 0.28A,
R
GEN
= 50
W, V
GS
= 10V
Turn-Off Fall Time
t
f
16
ns
Turn-On Delay Time
t
D(ON)
8
ns
Turn-Off Delay Time
t
D(OFF)
13
ns
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Notes: 2. Short duration test pulse used to minimize self-heating effect.
T
C
U
D
O
R
P
W
E
N
0.8
1.2
1.6
0.1
0.2
R
,
NORMALIZED
DS(ON)
DRAIN-SOURCE
ON-RESIST
A
NCE
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
V
= 4V
GS
2.0
2.4
0.3
0.4
0.5
0.6
V
= 3V
GS
V
= 5, 6, 7, 10V
GS
0
0.2
0.7
0
1
3
4
5
I
,
DRAIN-SOURCE
CURRENT
(A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V
= 4V
GS
2
0.6
0.5
0.1
0.3
0.4
V
= 3V
GS
V
= 10, 7, 6, 5V
GS
DS30368 Rev. 2 - 2
3 of 3
BSS123W
www.diodes.com
0
50
0
5
15
20
25
C,
CAP
A
CIT
A
NCE
(pF)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 5 Typical Capacitance
10
40
30
10
20
Ciss
Coss
Crss
f = 1.0MHz
0.4
0.8
1.2
-50
0
75
100
125 150
R
N
ORMALIZED
ON-RESIST
A
NCE
DS(ON),
T , JUNCTION TEMPERATURE (C)
J
Fig. 4 On-Resistance Variation with Temperature
1.6
1.8
2.2
-25
25
50
0.6
1
1.4
2
V
= 10V
GS
I = 170m
D
0.7
0.8
0.9
-50
0
75
100
125 150
V
N
ORMALIZED
T
HRESHOLD
VOL
T
AGE
GS(th),
T , JUNCTION TEMPERATURE (C)
J
Fig. 3 Gate Threshold Variation with Temperature
1
1.1
1.2
-25
25
50
T
C
U
D
O
R
P
W
E
N
Date Code Key
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K23
YM
Marking Information
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
BSS123W-7
SOT-323
3000/Tape & Reel
Ordering Information
(Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0
50
100
100
200
P
,
POWER
DISSIP
A
T
ION
(mW)
D
T , AMBIENT TEMPERATURE (C)
A
Fig. 6 Power Derating Curve, Total Package
150
200
250
0
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W