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Электронный компонент: BYT40Y

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D
S30032 Rev. B-5 1 of 2 BYT40Y
Features
BYT40Y
1.0A HIGH VOLTAGE GLASS BODY RECTIFIER
A
A
B
C
D
DOT-30B
Dim
Min
Max
A
26.0
B
4.2
C
0.82
D
3.0
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
j
= 25
C unless otherwise specified
Hermetically Sealed Glass Body Construction
High Voltage to 1600V with Low Leakage
Surge Overload Rating to 25A Peak
Mechanical Data
Case: DOT-30B, Glass
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.50 grams (approx.)
Characteristic
Symbol
BYT40Y
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
1600
V
RMS Reverse Voltage
V
R(RMS)
1130
V
Average Rectified Output Current
@ T
A
= 40
C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
I
FSM
25
A
Forward Voltage
@ I
F
= 1.0A
V
FM
1.3
V
Peak Reverse Leakage Current
@ T
j
= 25
C
at Rated DC Blocking Voltage
@ T
j
= 150
C
I
RM
5.0
150
mA
Reverse Recovery Time (Note 2)
t
rr
3.0
ms
Typical Junction Capacitance (Note 3)
C
j
6.0
pF
Typical Thermal Resistance Junction to Ambient (Note 1)
R
qJA
60
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 10mm from the case.
2. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
D
S30032 Rev. B-5 2 of 2 BYT40Y
0
0.4
1.2
25
0
50
75
100
125
150
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
O
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
A
0.2
0.6
0.8
1.0
0.1
1
10
0.01
0
I
,
INST
ANT
ANEOUS
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25 C
j
0.4
0.8
1.2
1.6
2.0
0.001
0.1
1
10
100
1000
0
I
,
REVERSE
CURRENT
(
A)
R
T ,
( C)
Fig. 3 Typical Reverse Characteristics
j
JUNCTION TEMPERATURE
V = V
R
RRM
25
50
75
100
150
125
50V DC
Approx
50 NI (Non-inductive)
10 NI
1.0
NI
Oscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
t
rr
Set time base for 50/100 ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0
2
4
6
8
10
12
1
0.1
10
100
C
,
(pF)
j
JUNCTION
CAPACITANCE
V ,
(V)
R
REVERSE VOLTAGE
Fig. 4 Typical Junction Capacitance
f = 1.0MHz
T = 25 C
j
14