DS30381 Rev. 5 - 2
1 of 3
MIMD10A
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Built-In Biasing Resistors
One 500mA PNP and One 100mA NPN
Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
-50
V
Input Voltage
V
IN
-5 to +5
V
Output Current
I
O
-500
mA
Features
Maximum Ratings PNP Section Tr1
@ T
A
= 25
C unless otherwise specified
A
M
J
L
D
B C
H
K
G
F
E
1
C
2
B
1
C
1
E
2
B
2
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 2
Marking Code: C73 (See Page 2)
Ordering & Date Code: See Page 2
Terminal Connections: See Diagram
Weight: 0.015 grams (approx.)
T
C
U
D
O
R
P
W
E
N
P/N
R1
R2
MIMD10A Tr1
Tr2
0.1K
10K
10K
-
R
1
R
1
R
2
T
r2
T
r1
SCHEMATIC DIAGRAM
MIMD10A
DUAL PRE-BIASED TRANSISTORS
FOR POWER MANAGEMENT
Maximum Ratings NPN Section Tr2
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Maximum Ratings - Total
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
d
200
mW
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
@ T
A
= 25
C unless otherwise specified
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0
8
All Dimensions in mm
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SPICE MODELS: MIMD10A
DS30381 Rev. 5 - 2
2 of 3
MIMD10A
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
V
l(off)
-0.3
V
V
CC
= -5V, I
O
= -100
mA
V
l(on)
-1.5
V
O
= 0.3, I
O
= -100mA
Output Voltage
V
O(on)
-0.1
-0.3
V
I
O
= -100mA/-5mA
Input Current
I
l
-25
mA
V
I
= -2V
Output Current
I
O(off)
-0.5
mA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
l
68
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= -50mA,
f = 100MHz
Electrical Characteristics PNP Section Tr1
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
V
I
C
= 50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
50
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
5
V
I
E
= 50
mA
Collector Cutoff Current
I
CBO
0.5
mA
V
CB
= 50V
Emitter Cutoff Current
I
EBO
0.5
mA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
/I
B
= 10mA / 1.0mA
DC Current Transfer Ratio
h
FE
100
250
600
I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
Date Code Key
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
C73
YM
Marking Information
Device
Packaging
Shipping
MIMD10A-7
SOT-363
3000/Tape & Reel
Ordering Information
(Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
Code
P
R
S
T
U
V
W
X
Y
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MIMD10-A-7-F.
DS30381 Rev. 5 - 2
3 of 3
MIMD10A
www.diodes.com
T
C
U
D
O
R
P
W
E
N
1
1
10
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Input Voltage vs. Collector Current
V = 0.2
O
V
,
INPUT
V
OL
T
A
GE
(V)
in
-25C
25C
75C
0.01
0.1
1
10
100
0
1
2
3
4
8
9
10
I
,
COLLECT
OR
CURRENT
(mA)
C
V , INPUT VOLTAGE (V)
in
Fig. 5 Collector Current Vs. Input Voltage
-25C
5
6
7
75C
25C
0.001
0
1
2
3
4
0
20
30
C
,
C
AP
A
C
IT
AN
C
E
(
pF
)
OB
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 4 Output Capacitance
10
5
15
25
I = 0mA
E
10
1000
100
1
1
10
100
h
,
DC
CURRENT
GAIN
(NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
V = 10
CE
75C
-25C
25C
0.001
0.01
0.1
1
0
10
20
30
40
50
V
,
MAXIMUM
C
OLLECT
OR
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 V
vs. I
CE(SAT)
C
I /I = 10
C B
-25C
75C
25C
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (C)
A
Fig. 1 Derating Curve
P
,
POWER
D
ISSIP
A
TION
(MILLIW
A
TTS)
D
(T
OT
AL
P
A
CKAGE)
TYPICAL CURVES - Tr2
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