DS30104 Rev. C-2
1 of 2
MMBF170
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
MMBF170
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0MW
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 1)
Continuous
Pulsed
I
D
500
800
mA
Total Power Dissipation (Note 1)
Derating above T
A
= 25
C
P
d
225
1.80
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
qJA
556
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K6Z
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 100
mA
Zero Gate Voltage Drain Current
I
DSS
1.0
A
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
15V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
0.8
2.1
3.0
V
V
DS
= V
GS
, I
D
=-250
mA
Static Drain-Source On-Resistance
R
DS (ON)
5.0
W
V
GS
= 10V, I
D
= 200mA
Forward Transconductance
g
FS
80
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
22
40
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
11
30
pF
Reverse Transfer Capacitance
C
rss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= 25V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50
W
Turn-Off Delay Time
t
D(OFF)
10
ns
Note:1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300ms, duty cycle 2%.
DS30104 Rev. C-2
2 of 2
MMBF170
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
I
,
DRAIN-SOURCE
CURRENT
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
GS
5.5V
5.0V
0
1
2
3
4
5
0
0.2
R,
N
O
RMALIZED
DRAIN-SOURCE
ON-RESIST
ANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
D
V = 5.0V
GS
T = 25 C
j
V = 10V
GS
6
7
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
-55 -30
-5
20
45
70
95
120 145
R,
N
O
RMALIZED
DRAIN-SOURCE
ON-RESIST
ANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs Junction Temperature
j
V
= 10V, I
GS
D
= 0.5A
V
= 5.0V, I
GS
D
= 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
R,
N
O
RMALIZED
DRAIN-SOURCE
ON-RESIST
ANCE
DS(ON)
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