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Электронный компонент: MMSTA06

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DS30168 Rev. B-1
1 of 1
MMSTA05/MMSTA06
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA55/MMSTA56)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMSTA05 Marking K1H, K1G
MMSTA06 Marking K1G
Weight: 0.006 grams (approx.)
SOT-323
Dim
Min
Max
A
0.30
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Characteristic
Symbol
MMSTA05
MMSTA06
Unit
Collector-Base Voltage
V
CBO
60
80
V
Collector-Emitter Voltage
V
CEO
60
80
V
Emitter-Base Voltage
V
EBO
4.0
V
Collector Current - Continuous (Note 1)
I
C
500
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMSTA05
MMSTA06
V
(BR)CBO
60
80
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
MMSTA05
MMSTA06
V
(BR)CEO
60
80
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4.0
V
I
E
= 100
mA, I
C
= 0
Collector Cutoff Current
MMSTA05
MMSTA06
I
CBO
100
nA
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
Collector Cutoff Current
MMSTA05
MMSTA06
I
CES
100
nA
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
100
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.25
V
I
C
= 100mA, I
B
= 10mA
Base- Emitter Saturation Voltage
V
BE(SAT)
1.2
V
I
C
= 100mA, V
CE
= 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
MHz
V
CE
= 2.0V, I
C
= 10mA,
f = 100MHz
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
NEW
PRODUCT