1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
8
01.11.2003
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BSR 15, BSR 16
Switching Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
PNP
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BSR 15
BSR 16
Collector-Emitter-voltage
B open
- V
CE0
40 V
60 V
Collector-Base-voltage
E open
- V
CB0
60 V
Emitter-Base-voltage
C open
- V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
- I
C
600 mA
Peak Collector current Kollektor-Spitzenstrom
- I
CM
800 mA
Peak Base current Basis-Spitzenstrom
- I
BM
200 mA
Junction temp. Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, - V
CB
= 50 V
BSR 15
- I
CB0
20 nA
I
E
= 0, - V
CB
= 50 V, T
j
= 150
/
C
- I
CB0
20
:
A
I
E
= 0, - V
CB
= 60 V
BSR 16
- I
CB0
10 nA
I
E
= 0, - V
CB
= 60 V, T
j
= 150
/
C
- I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, - V
EB
= 5 V
- I
EB0
50 nA
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
9
01.11.2003
Switching Transistors
BSR 15, BSR 16
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
DC current gain Kollektor-Basis-Stromverhltnis
1
)
- V
CE
= 10 V, - I
C
= 0.1 mA
BSR 15
h
FE
35
BSR 16
h
FE
75
- V
CE
= 10 V, - I
C
= 1 mA
BSR 15
h
FE
50
BSR 16
h
FE
100
- V
CE
= 10 V, - I
C
= 10 mA
BSR 15
h
FE
75
BSR 16
h
FE
100
- V
CE
= 10 V, - I
C
= 500 mA
BSR 15
h
FE
30
BSR 16
h
FE
50
- V
CE
= 10 V, - I
C
= 150 mA
h
FE
100
300
Collector saturation volt. Kollektor-Sttigungsspg.
1
)
- I
C
= 150 mA, - I
B
= 15 mA
- V
CEsat
400 mV
- I
C
= 500 mA, - I
B
= 50 mA
- V
CEsat
1.6 V
Base saturation voltage Basis-Sttigungsspannung
1
)
- I
C
= 150 mA, - I
B
= 15 mA
- V
BEsat
1.3 V
- I
C
= 500 mA, - I
B
= 50 mA
- V
BEsat
2.6 V
Gain-Bandwidth Product Transitfrequenz
- V
CE
= 20 V, - I
C
= 20 mA, f = 100 MHz
f
T
200 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
8 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
- V
EB
= 2 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
30 pF
Switching times Schaltzeiten
turn-on time
I
Con
= 150 mA
I
Bon
= 15 mA
- I
Boff
= 15 mA
t
on
40 ns
delay time
t
d
12 ns
rise time
t
r
30 ns
turn-off time
t
off
365 ns
storage time
t
s
300 ns
fall time
t
f
65 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BSR 13, BSR 14
Marking - Stempelung
BSR 15 = T7
BSR 16 = T8
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