e
1
PTB 20006
4 Watts, 860900 MHz
Cellular Radio RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
35
Watts
Above 25C derate by
0.2
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
5.0
C/W
20006
LOT CODE
Description
The 20006 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 4 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
4 Watts, 860900 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
0
2
4
6
8
10
12
0.00
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 50 A
f = 900 MHz
Typical Output Power vs. Input Power
Package 20201
9/28/98
PTB 20006
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 50 mA
V(
BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 50 mA
V(
BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, P
OUT
= 4 W, I
CQ
= 50 mA, f = 860 MHz)
G
pe
11.0
13.0
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, P
OUT
= 4 W, I
CQ
= 50 mA, f = 860 MHz)
C
45
--
--
%
Intermodulation Distortion
(V
CC
= 25 Vdc, P
OUT
= 4 W(PEP), I
CQ
= 50 mA,
IMD
--
-25
--
dBc
f
1
= 860MHz, f
2
= 861 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, P
OUT
= 4 W, I
CQ
= 50 mA, f = 860 MHz
--
--
30:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, P
OUT
= 4 W, I
CQ
= 50 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
860
5.3
-5.5
2.4
11.0
880
5.0
-5.0
2.3
11.6
900
4.9
-4.4
2.1
12.0
Z Source
Z Load
10/28/98
PTB 20006
3
e
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
9
10
11
12
13
14
15
840
855
870
885
900
915
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%
)
V
CC
= 25 V
I
CQ
= 50 mA
Pout = 4 W
Gain (dB)
Efficiency (%)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20006 Uen Rev. D 10-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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