e
1
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 100 mA
f = 900 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
65
Watts
Above 25C derate by
0.37
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
2.7
C/W
PTB 20038
25 Watts, 860900 MHz
Cellular Radio RF Power Transistor
20038
LOT CODE
Description
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
25 Watts, 860900 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20200
9/28/98
PTB 20038
2
e
0
10
20
30
40
50
60
70
80
840
855
870
885
900
915
Frequency (MHz)
Efficiency (%)
V
CC
= 25 V
I
CQ
= 100m A
Circuit Tuned for
25 W Load Line
Pout = 25 W
Pout = 10 W
Efficiency vs. Frequency
(as measeured in a broadband circuit)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V(
BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V(
BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 25 W, I
CQ
= 100 mA, f = 900 MHz)
G
pe
9.0
10.0
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 25 W, I
CQ
= 100 mA, f = 900 MHz)
C
50
--
--
%
Gain
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 900 MHz)
G
pe
10
11
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA, f = 900 MHz)
C
35
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 10 W, I
CQ
= 100 mA,
--
--
30:1
--
f = 900 MHz--all phase angles at frequency of test)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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