e
1
PTF 10135
5 Watts, 2.0 GHz
GOLDMOS
TM
Field Effect Transistor
Package 20249
0
1
2
3
4
5
6
7
8
0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Output P
o
wer (W
atts)
V
DD
= 26 V
I
DQ
= 70 mA
f = 2000 MHz
Typical Output Power vs. Input Power
Description
The PTF 10135 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal applications from 1.0 to 2.0
GHz. It is rated at 5 watts minimum output power. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability. 100% lot traceability is standard.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at Tflange = 25C
P
D
39
Watts
Above 25C derate by
0.22
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
q
JC
4.5
C/W
10135
A-1234569953
2
e
PTF 10135
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 26 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 2 A
g
fs
--
0.8
--
Siemens
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 1.93, 1.99 GHz)
G
ps
11
--
--
dB
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 70 mA, f = 1.99 GHz)
P-1dB
5
--
--
Watts
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz)
h
D
40
--
--
%
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
Typical Performance
10
11
12
13
14
15
16
1700
1800
1900
2000
2100
Frequency (MHz)
Ga
in
0
10
20
30
40
50
60
Output Powe
r
&
Effic
i
e
n
c
y
V
DD
= 26 V
I
DQ
= 70 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Pow er (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
6
8
10
12
14
16
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Gain (dB
)
0
10
20
30
40
50
60
V
DD
= 26 V
I
DQ
= 70 mA
P
OUT
= 4 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
E
fficienc
y
Retur
n
Loss
3
e
PTF 10135
Output Power vs. Supply Voltage
4
5
6
7
8
22
24
26
28
30
32
34
Supply Voltage (Volts)
Output P
o
wer
(W
atts)
I
DQ
= 70 mA
f = 2000 MHz
-70
-60
-50
-40
-30
-20
-10
0
1
2
3
4
5
6
Output Power (Watts-PEP)
IM
D (d
Bc)
V
DD
= 26 V, I
DQ
= 70 mA
f
1
= 1999.9 MHz, f
2
= 2000.0 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Gain vs. Gate Voltage
0
4
8
12
16
20
2
3
4
5
6
Gate-Source Voltage (Volts)
P
o
wer Gai
n
(
d
B)
V
DD
= 26 V
P
IN
= 0.05 W
f = 2.0 GHz
f = 1.9
Capacitance vs. Supply Voltage
0
3
6
9
12
15
18
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Crss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.05
0.145
0.24
0.335
0.43
0.525
Voltage normalized to 1.0 V
Series show current (A)
4
e
PTF 10135
Typical Scattering Parameters
(V
DS
= 26 V, I
DQ
= 300 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.874
-58
24.1
137
0.009
46
0.770
-35
400
0.889
-115.5
12.707
89.0
0.016
9.1
0.759
-73.3
500
0.892
-128.2
10.388
76.6
0.015
1.1
0.768
-83.2
600
0.897
-138.1
8.626
66.5
0.013
-5.3
0.798
-92.6
700
0.903
-148.6
7.283
54.4
0.011
-11.1
0.833
-103.7
800
0.860
-154.5
5.853
46.3
0.008
-14.7
0.825
-112.5
900
0.873
-159.3
4.977
39.6
0.006
2.4
0.837
-119.4
1000
0.873
-162.8
4.262
33.4
0.005
10.7
0.853
-126.7
1100
0.891
-166.9
3.736
27.5
0.004
42.5
0.861
-132.7
1200
0.890
-169.6
3.264
22.7
0.005
70.3
0.863
-137.9
1300
0.904
-173.1
2.911
17.1
0.007
82.9
0.875
-143.1
1400
0.896
-174.7
2.583
13.5
0.010
87.4
0.866
-146.7
1500
0.932
-177.4
2.395
8.3
0.013
87.3
0.896
-150.4
1600
0.932
179.2
2.155
3.6
0.015
88.4
0.905
-155.0
1700
0.950
175.8
1.988
-1.6
0.018
87.5
0.930
-158.7
1800
0.955
171.8
1.808
-6.4
0.021
84.4
0.944
-162.9
1900
0.959
167.4
1.656
-12.0
0.023
81.5
0.972
-167.9
2000
0.945
164.0
1.487
-16.2
0.026
78.8
0.955
-172.4
2100
0.946
160.4
1.354
-21.3
0.027
76.6
0.963
-176.8
2200
0.949
159.3
1.250
-24.5
0.030
72.6
0.948
-180.0
2300
0.953
156.3
1.152
-29.2
0.032
69.4
0.961
175.9
2400
0.946
155.4
1.050
-31.0
0.034
68.6
0.931
173.8
Impedance Data
V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA
0.1
0.3
05
0.2
0.4
0.1
0.2
0.1
0.3
0.2
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
-->
0
.0
5
<
--
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
1.7 GHz
2.1 GHz
2.1 GHz
1.7 GHz
Z Load
Z Source
Z
0
= 50
W
Z Source
Z Load
G
S
D
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.7
5.3
-2.9
8.0
3.0
1.8
3.3
-4.6
7.0
2.5
1.9
2.8
-5.0
6.0
1.2
2.0
2.6
-5.3
5.8
0.6
2.1
2.1
-6.0
5.7
-0.6
5
e
PTF 10135
Test Circuit
Block Diagram for f = 1.96 GHz
Q1
PTF 10135
LDMOS RF FET
l
1,
l
2,
l
7
Microstrip 50
W
l
3
0.149
l
1.96 GHz
Microstrip 10.4
W
l
4
0.081
l
1.96 GHz
Microstrip 15.9
W
l
5
0.073
l
1.96 GHz
Microstrip 12.1
W
l
6
0.06
l
1.96 GHz
Microstrip 15.9
W
C1, C3, C8, C9
33 pF
Chip Cap
C2, C5
0.7 pF
Chip Cap
C4
0.33.5 pF
Variable Capacitor
C6
0.3 pF
Chip Cap
C7, C10
0.1
m
F
Chip Cap
C11
10
m
F
SMT Tantalum
L1, L2
4 Turn
#20 AWG, .120" I.D.
R1, R2
220
W
Chip Resistor K1206
R3
2K
SMT Potentiometer
R4
10
W
Chip Resistor K1206
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
Parts Layout (not to scale)
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