e
1
PTF 10137
12 Watts, 1.0 GHz
GOLDMOS
TM
Field Effect Transistor
10137
A-1234569942
0
5
10
15
20
0.0
0.2
0.4
0.6
Input Power (Watts)
Output Power (Watts)
0
20
40
60
80
Efficiency
V
DD
= 28 V
I
DQ
= 160 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency (%)
Output Power (W)
Package 20244
Performance at 960 MHz, 28 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 60% efficiency with
18 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
G
ps
16.5
18
--
dB
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 160 mA, f = 960 MHz)
P-1dB
12
15
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
h
55
60
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
2
PTF 10137
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 0.5 A
g
fs
--
0.9
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
58
Watts
Above 25C derate by
0.33
W/C
Storage Temperature Range
T
STG
40 to 150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
3.0
C/W
Typical Performance
11
12
13
14
15
16
17
18
840
880
920
960
1000
Frequency (MHz)
Ga
i
n
10
20
30
40
50
60
70
80
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 160 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
8
12
16
20
960
970
980
990
1000
Frequency (MHz)
Ga
i
n
40
50
60
70
80
V
DD
= 28 V
I
DQ
= 160 mA
P
OUT
= 12 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficienc
y
Re
turn Los
s
-10
-20
3
PTF 10137
e
Power Gain vs. Output Power
14
15
16
17
18
19
0.1
1.0
10.0
100.0
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 960 MHz
I
DQ
= 160 mA
I
DQ
= 80 mA
I
DQ
= 40 mA
Output Power vs. Supply Voltage
10
12
14
16
18
20
24
26
28
30
32
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 160 mA
f = 960 MHz
-60
-50
-40
-30
-20
-10
0
0
5
10
15
20
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V, I
DQ
= 160 mA
f
1
=960.0 MHz, f
2
= 960.1 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Capacitance vs. Supply Voltage
10
20
30
40
50
60
70
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
1
2
3
4
5
6
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Temp. (C)
Bias Voltage (V)
0.075
0.33
0.585
0.84
1.095
1.35
Voltage normalized to 1.0 V
Series show current (A)
4
PTF 10137
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 450 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.862
-126
25.8
101
0.018
11.5
0.575
-78.7
150
0.866
-135
21.1
93.6
0.018
3.96
0.583
-86.4
200
0.872
-146
15.5
80.9
0.018
-5.92
0.587
-97.4
250
0.881
-153
12.0
71.6
0.017
-13.4
0.613
-106
300
0.888
-157
9.57
63.7
0.016
-19.1
0.646
-113
350
0.896
-161
7.86
57.0
0.015
-24.0
0.679
-119
400
0.905
-164
6.55
51.0
0.013
-27.9
0.713
-124
450
0.910
-166
5.53
45.7
0.012
-31.0
0.742
-129
500
0.920
-168
4.74
40.8
0.011
-32.8
0.770
-133
550
0.927
-169
4.09
36.6
0.009
-34.0
0.792
-137
600
0.932
-171
3.57
32.4
0.008
-35.0
0.813
-141
650
0.940
-173
3.15
28.9
0.007
-34.2
0.834
-144
700
0.942
-174
2.79
25.5
0.006
-32.7
0.849
-147
750
0.948
-175
2.49
22.1
0.005
-27.9
0.865
-150
800
0.953
-177
2.23
19.3
0.004
-20.5
0.874
-152
850
0.955
-178
2.01
16.2
0.003
-8.60
0.884
-155
900
0.958
-179
1.83
13.6
0.003
10.9
0.896
-157
950
0.961
-180
1.66
11.1
0.003
32.3
0.902
-159
1000
0.963
179
1.52
8.52
0.003
47.7
0.912
-161
1050
0.967
178
1.39
6.44
0.004
57.8
0.917
-162
1100
0.967
177
1.27
4.07
0.004
63.1
0.921
-164
1150
0.967
176
1.18
1.96
0.005
68.8
0.929
-166
1200
0.970
175
1.09
0.12
0.006
70.7
0.932
-167
1250
0.970
174
1.01
-2.03
0.006
73.2
0.937
-169
1300
0.972
173
0.943
-3.66
0.007
74.5
0.943
-170
1350
0.973
172
0.874
-5.57
0.008
75.7
0.943
-172
1400
0.978
172
0.825
-7.37
0.009
75.8
0.950
-173
1450
0.978
171
0.772
-8.77
0.009
76.4
0.948
-174
1500
0.981
170
0.729
-10.7
0.010
76.6
0.952
-176
1550
0.981
169
0.689
-12.1
0.011
77.2
0.958
-177
1600
0.982
168
0.647
-13.9
0.012
76.3
0.958
-178
1650
0.983
167
0.615
-15.7
0.013
75.0
0.966
-179
1700
0.983
167
0.580
-16.9
0.013
74.7
0.964
-180
1750
0.983
166
0.549
-18.7
0.014
74.4
0.961
179
1800
0.983
165
0.525
-20.3
0.015
74.7
0.962
178
1850
0.981
164
0.499
-21.8
0.015
74.0
0.958
176
1900
0.981
163
0.478
-23.4
0.016
72.9
0.967
175
1950
0.981
162
0.454
-24.3
0.017
72.1
0.967
175
2000
0.981
161
0.431
-26.0
0.018
71.3
0.967
173
2050
0.981
161
0.414
-27.3
0.018
71.3
0.969
173
2100
0.979
160
0.395
-28.6
0.019
70.8
0.963
172
2150
0.979
159
0.382
-30.0
0.019
69.8
0.969
170
2200
0.975
158
0.371
-30.7
0.020
69.1
0.969
169
Impedance Data
V
DD
= 28 V, I
DQ
= 160 mA, P-1dB = 18 W
0.
1
0.
3
0.
2
0.1
0.2
0.1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
--
>
<
--
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
840 MHz
Z Source
1000 MHz
840 MHz
1000 MHz
Z Source
Z Load
G
S
D
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
840
1.1
1.9
4.1
4.3
860
0.8
0.8
3.8
3.3
880
0.8
0.1
3.7
2.8
900
0.7
-0.3
3.6
2.3
920
0.6
-0.7
4.1
2.1
940
0.8
-0.9
4.3
2.0
960
1.1
-1.2
4.8
1.6
980
1.6
-1.2
5.3
2.6
1000
1.6
-0.9
5.0
3.7
Z
0
= 50
W
5
PTF 10137
e
Test Circuit
Assembly Diagram (not to scale)
Test Circuit Schematic for f = 960 MHz
DUT
PTF 10137
l
1,
l
6
Microstrip 50
W
l
2
0.197
l
960 MHz
Microstrip 10
W
l
3
0.018
l
960 MHz
Microstrip 44
W
l
4
0.184
l
960 MHz
Microstrip 12.7
W
l
5
0.047
l
960 MHz
Microstrip 50
W
C1
ATC 100 B
Capacitor, 8.2 pF, ATC 100 B
C2,C4,C5,C8
ATC 100 B
Capacitor, 36 pF, ATC 100 B
C3,C6
Digi-Key P4525-ND
Capacitor, 0.1
m
F, 50V
C7
Digi-Key P5182-ND
Capacitor, 100
m
F, 50V
C9, C10
ATC 100 B
2.0 pF Capacitor, ATC 100 B
R1, R2
Digi-Key 2.2 QBK
Resistor, 220
W
, 1/4W
L1,L2
N/A
4 Turn, 20 AWG, .120 I.D.
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0, AlliedSignal,
G200, 2 oz. copper
6
PTF 10137
e
Test Circuit
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1999 Ericsson Inc.
EUS/KR 1301-PTF 10137 Uen Rev. A 10-28-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Artwork (1 inch
)
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