e
1
PTF 10193
12 Watts, 860-960 MHz
GOLDMOS Field Effect Transistor
0
4
8
12
16
20
0.0
0.2
0.4
0.6
Input Power (Watts)
Ou
tp
u
t
P
o
we
r (Wa
tts
)
20
30
40
50
60
70
Ef
f
i
ci
ency (
%
)
x
V
DD
= 26 V
I
DQ
= 160 mA
f = 960 MHz
Typical Output Power & Efficiency vs.
Input Power
Output Power
Efficiency
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10193 is an internally matched, 12watt GOLDMOS FET
intended for GSM, CDMA and TDMA amplifier applications from 860
to 960 MHz. This device operates at 60% efficiency with 18 dB typical
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
G
ps
17.0
18
--
dB
Power Output at 1 dB Compressed
(V
DD
= 26 V, I
DQ
= 160 mA, f = 960 MHz)
P-1dB
12
14
--
Watts
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
h
55
60
--
%
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 921 MHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
10193
A-1234560008
Package 20259
10193
1234560008A
2
PTF 10193
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 0.5 A
g
fs
--
0.9
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
58
Watts
Above 25C derate by
0.33
W/C
Storage Temperature Range
T
STG
40 to 150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
3.0
C/W
Typical Performance
10
12
14
16
18
20
860
880
900
920
940
960
Frequency (MHz)
Ga
i
n
10
22
34
46
58
70
Ou
tp
u
t
Po
we
r &
Efficiency
V
DD
= 26 V
I
DQ
= 160 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
8
12
16
20
920
930
940
950
960
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 26 V
I
DQ
= 160 mA
P
OUT
= 10 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Return Loss
- 5
-10
-15
-20
3
PTF 10193
e
Power Gain vs. Output Power
14
15
16
17
18
19
20
0
1
10
100
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 26 V
f = 960 MHz
I
DQ
= 160 mA
I
DQ
= 80 mA
I
DQ
= 45 mA
10
12
14
16
18
20
22
24
26
28
30
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 160 mA
f = 960 MHz
Output Power
(at 1 dB Compression)
vs. Supply Voltage
-60
-50
-40
-30
-20
-10
0
0
3
6
9
12
15
18
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 26 V, I
DQ
=160 mA
f
1
= 959.900 MHz
f
2
=960.000 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Capacitance vs. Supply Voltage *
0
5
10
15
20
25
30
35
40
45
50
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
1
2
3
4
5
6
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Case Temperature (C)
0.075
0.33
0.585
0.84
1.095
1.35
Voltage normalized to 1.0 V
Series show current (A)
G
a
te-Sour
ce Voltage (N
or
malized)
Gate-Source Voltage vs. Case Temperature
* This part is internally matched. Measurements of the
finished product will not yield these figures.
4
PTF 10193
e
Typical Scattering Parameters
(V
DS
= 26 V, I
D
= 400 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
300
-0.284
-169
12.4
47.8
-42.7
-34.2
-1.62
-99.9
350
-0.266
-171
10.7
41.6
-43.7
-38.9
-1.34
-108
400
-0.241
-172
9.20
36.1
-44.7
-41.9
-1.24
-115
450
-0.243
-173
7.86
31.2
-45.4
-45.0
-1.08
-121
500
-0.231
-175
6.68
26.7
-46.7
-47.2
-0.958
-126
550
-0.223
-176
5.74
22.6
-47.6
-49.8
-0.852
-131
600
-0.231
-177
4.90
18.8
-48.7
-51.6
-0.818
-135
650
-0.233
-178
4.22
14.9
-49.6
-50.6
-0.697
-138
700
-0.241
-179
3.77
11.3
-50.7
-50.0
-0.633
-141
750
-0.250
-180
3.53
7.19
-51.5
-51.1
-0.593
-144
800
-0.287
179
3.36
2.91
-52.3
-48.2
-0.576
-146
850
-0.325
178
3.54
-1.78
-53.1
-50.9
-0.449
-148
900
-0.397
177
4.04
-7.86
-53.4
-52.3
-0.391
-150
950
-0.539
176
4.89
-15.7
-53.4
-56.9
-0.342
-152
1000
-0.839
174
6.06
-27.7
-52.4
-68.8
-0.247
-154
1050
-1.45
174
7.55
-47.7
-50.9
-97.0
-0.114
-156
1100
-1.98
180
8.01
-79.6
-49.6
-140
-0.232
-159
1150
-1.33
-175
5.76
-113
-49.5
175
-0.463
-160
1200
-0.689
-176
2.23
-134
-50.5
147
-0.527
-161
1250
-0.379
-177
-1.11
-146
-50.5
127
-0.535
-162
1300
-0.231
-178
-4.10
-155
-50.5
118
-0.552
-162
1350
-0.170
-179
-6.82
-159
-50.2
109
-0.463
-163
1400
-0.123
-180
-9.12
-164
-49.8
104
-0.470
-164
1450
-0.101
179
-11.2
-167
-49.3
101
-0.493
-164
1500
-0.072
179
-13.2
-170
-49.1
99.7
-0.466
-165
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
860
2.0
2.7
5.8
4.4
880
2.0
2.6
5.5
4.6
900
2.0
2.4
5.0
5.0
920
1.9
2.3
4.8
5.1
960
1.9
2.1
4.7
5.3
Impedance Data
V
DD
= 26 V, I
DQ
= 160 mA, P-1dB = 12 W
Z Source
Z Load
G
S
D
Z
0
= 50
W
5
PTF 10193
e
Test Circuit
Assembly Diagram (not to scale)
Test Circuit Schematic for f = 960 MHz
DUT
PTF 10193
l
1
0.1425
l
960 MHz
Microstrip 50
W
l
2
0.1309
l
960 MHz
Microstrip 9.29
W
l
3
0.1640
l
960 MHz
Microstrip 9.29
W
l
4
0.0174
l
960 MHz
Microstrip 29.4
W
l
5
0.1916
l
960 MHz
Microstrip 11.72
W
l
6
0.0535
l
960 MHz
Microstrip 50
W
l
7
0.0321
l
960 MHz
Microstrip 50
W
C1, C2, C4, C7
Capacitor, 36 pF
100B 360
C3
Capacitor, 5.1 pF
100A 5R1
C5
Capacitor, 0.1
m
F, 50 V
DIGI-KEY P4525-ND
C6
Capacitor, 100
m
F, 50 V
DIGI-KEY P5182-ND
C8
Capacitor, 3.6 pF
100B 3R6
C9
Capacitor, 2.7 pF
100B 2R7
R1, R2, R3
Resistor, 220
W
DIGI-KEY 220QBK-ND
L1
4 Turns, 20 AWG, .120 I.D.N/A
Circuit Board
G200, .031" Thick, 2 oz. Copper
e
r
= 4.00, AlliedSignal
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