Power Transistors
www.jmnic.com
2SC1030
Silicon NPN Transistors
1B 2E 3C
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING
UNIT
V
CBO
Collector to base voltage
150
V
V
CEO
Collector to emitter voltage
80
V
V
EBO
Emitter to base voltage
6
V
I
C
Collector current-Continuous
6
A
P
D
Total Power Dissipation@TC=25 50 W
T
j
Junction temperature
200
T
stg
Storage temperature
-55~200
TO-3
Electrical Characteristics Tc=25
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V
CEO
Collector-Emitter Sustaining Voltage
I
C
=0.2A; I
B
=0 80
V
V
CER
Collector-Emitter Sustaining Voltage
I
CEO
Collector Cutoff Current
V
CE
=30V; I
B
=0
2.0
mA
I
EBO
Emitter Cutoff Current
V
EB
=6V; I
C
=0
1.0
mA
I
CBO
Collector Cutoff Current
V
CB
=30V; I
E
=0
1.0
mA
V
EBO
Base-emitter breakdown voltage
V
CE(sat-1)
Collector-emitter saturation voltages
I
C
=5.0A; I
B
=1.0A
1.5
V
V
CE(sat-2)
Collector-emitter saturation voltages
V
CE(sat-3)
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio
I
C
=1A; V
CE
=5V 35
200
h
FE-2
Forward current transfer ratio
I
C
=5A; V
CE
=5V 22
h
FE-3
Forward current transfer ratio
V
BE(on)
Base-emitter On voltages
f
T
Current Gain-Bandwidth Product
I
C
=1A; V
CE
=5V
10
MHz
h
fe
Small-Signal Current Gain
JM
n
ic
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