Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
POWER MOSFET
IRF830
Advance Information
Ordering Information
Device Package Temp.
IRL830T TO-220
0 to 150
C
IRL830S
TO-263 ( D
2
)
0 to 150
C
Absolute Maximum Rating
Parameter Max
Unit
I
D
@ T
C
=25
C
Continuous Drain Current, V
GS
@10V 4.5
I
D
@ T
C
=100
C
Continuous Drain Current, V
GS
@10V 2.9
I
DM
Pulsed Drain Current (1)
18
A
P
D
@ T
C
=25
C
Power Dissipation
74
W
Linear Derating Factor
0.59
Linear Derating Factor ( PCB Mount, D
2
) (1)
0.025
W/
C
V
GS
Gate-to- Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy (2)
280
mJ
I
AR
Avalanche Current (1)
4.5
A
E
AR
Repetitive Avalanche Energy (1)
7.4
mJ
dv/dt
Peak Diode Recovery dv/dt (3)
3.5
V/ns
T
J
, T
STG
Junction & Storage Temperature Range
-
55 to +150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
C
Thermal Resistance
Parameter
Min Typ Max Units
R
JC
Junction-to Case
-
-
1.7
R
CS
Case-to-Sink, Flat, Greased Surface ( TO-220)
- 0.50
R
JA
Junction-to Ambient ( PCB Mount, D
2
)
40
R
JA
Junction-to Ambient
-
-
62
C/W
Description
The Bay Linear MOSFET's provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
= 500V
R
DS (ON)
= 1.5
I
D
= 4.5A
Bay Linear
Bay Linear
Bay Linear
Bay Linear
Linear Excellence
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
IRF830
Electrical Characteristics (
T
C
= 25
C unless otherwise specified)
Symbol Parameter
Conditions Min
Typ
Max
Units
V
(BR)DSS
Drain-to-source Breakdown
Voltage
V
GS
= 0V, I
D
= 250
A
500 V
V
(BR)DSS
/
T
J
Breakdown Voltage
Temperature Coefficient
Reference to 25
C,
I
D
= 1mA
- 0.61 - V/
C
I
D(ON)
On-State Drain Current
(note 2)
V
GS
>
I
D(ON)
x R
DS(ON)
Max
4.5
A
R
DS(ON)
Static Drain-to-Source
On-Resistance
V
GS
=10V, I
D
= 2.7A
(note 4)
1.5
V
GS(TH)
Gate Threshold Voltage
V
DS
=
V
GS,
I
D
=
250
A
2.0 - 4.0 V
g
fs
Forward Transconductance
V
DS
=
50V, I
D
=
2.7A
2.5 - - S
V
DS
=
500V, V
GS
=
0V 25
I
DSS
Drain-to-Source Leakage
Current
V
DS
= 400V, V
GS
= 0V,
T
C
= 125
C
- -
250
A
Gate-to-Source Forward
Leakage
V
GS
= 20V
100
I
GSS
Gate-to-Source Reverse
Leakage
V
G
= -20V
- -
-100
nA
Q
g
Total Gate Charge
I
D
=3.1A -
-
38
Q
qs
Gate-to-Source Charge
V
DS
= 400V
-
-
5.0
Q
gd
Gate-to-Drain ("Miller")
Charge
V
GS
= 10V (note 4)
22
nC
t
d ( on)
Turn-On Delay Time
-
8.2
-
T
r
Rise Time
-
16
-
t
d (off)
Turn -Off Delay Time
-
42
-
T
f
Fall Time
V
DD
= 250V
I
D
= 3.1.1A
R
G
= 12
R
D
= 79
(note 4)
- 16 -
ns
L
D
Internal Drain Inductance
-
4.5
-
L
S
Internal Source Inductance
Between lead 6mm (0.25in.)
from package and center or die
contact
- 7.5 -
nH
C
iss
Input Capacitance
-
610
-
C
oss
Output Capacitance
-
160
-
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
F = 1.0MHZ
- 68 -
pF
Source-Drain Rating Characteristics
Symbol Parameter
Conditions
Min Typ Max Units
I
S
Continuous Source Current
(Body Diode)
- -
4.5
I
SM
Pulsed Source Current
(Body Diode) (Note 1)
MOSFET symbol showing the
integral reverse p-n junction
diode.
- -
18
A
V
SD
Diode Forward Voltage (note 4) T
J
=25
C
,
I
S
=2.5A,V
GS
=DV
- -
1.6 V
t
rr
Reverse Recovery Time
-
320
640
ns
Q
rr
Reverse Recovery Charge
T
J
=25
C, I
F
=2.1A
di/dt=100A/
s (Note 4)
- 1.0 2.0
C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by (L
S
+L
D
)
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2. V
DD
= 50V, starting Tj = 25
C, L = 24 mH R
G
= 25
, I
AS
= 4.5A
3. I
SD
4.5A, di/dt
75A/
s, V
DD
V
(BR)DSS
, T
j
150
C
4. Pulse with
300
s; duty cycle
2%
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer's technical experts must validate all operating parameters including " Typical" for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
PDF 
ZIP