Page 1
2004.11.17
PS1102HA
Surface Mount Phototransistor/2125 Type
Recommended Applications
Car Audio, Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications
Outer Dimension 2.0 x 1.25 x 0.8mm ( L x W x H )
Small Size
Photo Current : 2mA TYP. (V
CE
=5V,Ee=5mW/cm
2
)
Wide Distribution
No lead package
Leadfree soldering compatible
Peak Sensitivity Wavelength
880nm
Product features
Die materials
Si
x = 130 deg., y = 135 deg.
Features
Package
2125 Type, Water clear epoxy
Half Intensity Angle
Rank grouping parameter
Soldering methods
ESD
Reflow soldering, and manual soldering
Please refer to Soldering Conditions about soldering.
2kV (HBM)
Sorted by photo current per rank taping
Assembly method
Auto pick & place machine (Auto Mounter)
Taping and reel
4,000pcs per reel in a 8mm width tape. (Standard)
Reel diameter:180mm
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2004.11.17
PS1102HA
Surface Mount Phototransistor/2125 Type
Abs olute Maximum R atings
Ite m
S ymbol
Unit
Colle ctor Dissipa tion
P c
mW
Colle ctor-E mitte r Volta g e
V
CE O
V
E mitte r-Colle ctor Volta g e
V
E CO
V
Colle ctor Curre nt
Ic
mA
Ope ra ting T e mpe ra ture
T
o p r
S tora g e Te mpe ra ture
T
s tg
E lectro- Optical Characteris tics
Min.
0.4
mA
T YP .
2
mA
Re sponse T ime
tr/tf
T YP .
8/9
s
Da rk Curre nt
I
C E O
Ma x .
0.1
A
P e a k S e nsitivity Wa ve le ng th
p
T YP .
880
nm
130(x )
135(y)
1 Color te mpe ra ture is 2,856K. E mploys a standa rd tungste n lamp.
Abs olute Max imum Ratings
75
30
5
Ic
V
CE
=5V,
E e =5mW/cm
2 1
Conditions
20
-30 +85
-40 +90
V
C E
=10V, Ic=2mA,
R
L
=100
V
CE O
=10V
V
C E
=5V
P hoto Curre nt
Cha ra cte ristics
Ite m
Unit
S ymbol
de g.
S pa tia l Ha lf Width
V
C E
=5V
T YP .
(Ta=25)
(Ta=25)
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2004.11.17
Photo Current Rank
(Ta=25)
Please contact our sales staff concerning rank designation.
MIN.
MAX .
A
0.4
0.8
B
0.7
1.4
C
1.2
2.4
D
2.1
4.2
E
3.6
7.2
Ic(mA)
V
CE
= 5V
E e = 5mW/cm
2
Condition
R ank
PS1102HA
Surface Mount Phototransistor/2125 Type
Page 4
2004.11.17
Technical Data
Spatial Distribution Example
Condition : Ta = 25
PS1102HA
Surface Mount Phototransistor/2125 Type
Relative Sensitivity vs. Sensitivity Wavelength
Condition : Ta = 25, V
CE
= 5V
Sensitivity Wavelength [nm]
Re
lat
i
v
e
Se
ns
it
i
v
it
y
Radiation Luminance vs. Relative Photo Current
Condition : Ta = 25, V
CE
= 5V
Radiation Luminance Ee(mW/cm
2
)
Relat
i
ve Ph
ot
o
C
u
rre
nt Ic
It is based on Ee=5mW/cm
2
.
Employs a standard tungsten lamp of 2,856K.
Collector-Emitter Voltage vs. Photo Current
Condition : Ta = 25
Collector-Emitter Voltage V
CE
(V)
Ph
ot
o C
u
r
r
e
n
t
Ic
(mA)
Employs a standard tungsten lamp of 2,856K.
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2004.11.17
Technical Data
Response Time Measuring Circuit
Ambient Temperature vs. Collector Dissipation
Ambient Temperature : Ta()
Ambient Temperature vs. Dark Current
Condition : V
CEO
= 10V
Ambient Temperature : Ta()
D
a
rk
Curr
ent : I
CEO
(nA)
Load Resistance vs. Response Time
Condition : V
CE
=10V, Ic=2mA, Ta=25
Load Resistance : R
L
()
R
e
spons
e
Time
(
s)
C
o
llecto
r
D
i
ss
i
p
ati
o
n
:
Pc(mW)
PS1102HA
Surface Mount Phototransistor/2125 Type
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