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Device NoDPT-020-047 Prepared date07-20-2004 Prepared byJaine Tsai
Technical Data Sheet
3mm Phototransistor T-1
PT204-6C
Features
Fast response time
High photo sensitivity
Pb free
Descriptions
PT204-6C is a high speed and high sensitive NPN silicon
phototransistor molded in a standard
3 mm package.
Due to is water clear epoxy the device is sensitive
to visible and near infrared radiation.
Applications
Infrared applied system
Camera
Printer
Optoelectronic switch
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
PT Silicon
Water
clear
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Device NoDPT-020-047 Prepared date07-20-2004 Prepared byJaine Tsai
PT204-6C
Package Dimensions
Notes: 1.All dimensions are in millimeters
2.Tolerances unless dimensions 0.25mm
Absolute Maximum Ratings (Ta=25)
Parameter Symbol
Rating
Units
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Collector-Voltage V
ECO
5 V
Collector Current
I
C
20 mA
Operating Temperature
Topr
-25 ~ +85
Storage Temperature
Tstg
-40 ~ +85
Lead Soldering Temperature
Tsol
260
Power Dissipation at (or
below)
25 Free Air Temperature
Pc 75 mW
Notes: *1:Soldering time5 seconds.
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Device NoDPT-020-047 Prepared date07-20-2004 Prepared byJaine Tsai
PT204-6C
Electro-Optical Characteristics (Ta=25)
Parameter Symbol
Condition
Min.
Typ.
Max.
Units
Rang Of Spectral Bandwidth
0.5
--- 400
---
1100
nm
Wavelength Of Peak Sensitivity
P
--- ---
940
--- nm
Collector Emitter
Breakdown Voltage
BV
CEO
I
C
=100A
Ee=0mW/cm
2
30
--- ---
V
Emitter-Collector
Breakdown Voltage
BV
ECO
I
E
=100A
Ee=0mW/cm
2
5
--- ---
V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
=2mA
Ee=1mW/cm
2
--- --- 0.4
V
Rise Time
t
r
--- 15 ---
Fall Time
t
f
V
CE
=5V
I
C
=1mA
RL=1000
--- 15 ---
S
Collector Dark Current
I
CEO
Ee=0mW/cm
2
V
CE
=20V
--- --- 100 nA
On State Collector Current
I
C(on)
Ee=1mW/cm
2
V
CE
=5V
0.7 2.0 --- mA
Rankings
Parameter
Symbol
Min
Max
Unit
Test Condition
G
0.70 1.90
H
1.14 2.60
J
1.77 3.61
K
I
C(ON)
2.67 5.07
mA
V
CE
=5V
Ee=1mW/c
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Device NoDPT-020-047 Prepared date07-20-2004 Prepared byJaine Tsai
0.01
0.5
1
1.5
2
3
0.1
1
10
100
C
0
0.2
0.4
0.6
0.8
1.0
Ta=25
100 300 500 700 900 1100 1300
O
C
0
-25
20
40
50
0
25
85
75
100
60
80
100
20
0
0
40
10
20 30
60
50
70
100
60
40
80
140
120
160
2
PT204-6C
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs. Fig.2 Spectral Sensitivity
Ambient Temperature
Fig.3 Relative Collector Current vs. Fig.4 Collector Current vs.
Ambient Temperature Irradiance
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Device NoDPT-020-047 Prepared date07-20-2004 Prepared byJaine Tsai
10
10
0
10
10
10
25
50
75
100
10
4
0
0
2
1
6
8
2
3
14
12
4
PT204-6C
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs. Fig.6 Collector Current vs.
Ambient Temperature Collector-Emitter Voltage
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