S11/3
PLASTIC SOD 323
CASE 477
1
2
MMDL101T1
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for highefficiency
UHF and VHF detector applications. Readily available to many
other fast switching RF and digital applications.
Very Low Capacitance -- Less than 1.0 pF @ Zero Volts
Low Noise Figure -- 6.0 dB Typ @ 1.0 GHz
Device Marking: 4M
MAXIMUM RATINGS
Symbol
Rating
Va l u e
Unit
V
R
Reverse Voltage
7.0
Vdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
M a x
Unit
P
D
Total Device Dissipation FR5 Board,*
200
mW
T
A
= 25C
Derate above 25C
1.57
mW/C
R
JA
Thermal Resistance Junction to Ambient
635
C/W
T
J
, T
stg
Junction and Storage
55 to+150
C
Temperature Range
*FR5 Minimum Pad
ORDERING INFORMATION
Device
Package
Shipping
MMDL101T1
SOD323
3000 / Tape & Reel
1.0 pF SCHOTTKY
B A R R I E R D I O D E
2
ANODE
1
CATHODE
ELECTRICAL CHARACTERISTICS
(T A = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
M a x
Unit
Reverse Breakdown Voltage
V
(BR)R
7.0
10
--
Volts
(I
R
= 10
A)
Diode Capacitance
(V
R
= 0, f = 1.0MHz, Note 1)
C
T
--
0.88
1.0
pF
Reverse Leakage
(V
R
= 3.0 V)
I
R
--
20
250
nAdc
Noise Figure
(f = 1.0 GHz, Note 2)
N F
--
6.0
--
dB
Forward Voltage
(I
F
= 10 mA)
V
F
--
0.5
0.6
Vdc
*Notes on Next Page
S12/3
MMDL101T1
TYPICAL CHARACTERISTICS
T
A
, AMBIENT TEMPERATURE (C)
Figure 1. Reverse Leakage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
P
LO
, LOCAL OSCILLATOR POWER (mW)
Figure 4. Noise Figure
Figure 5. Noise Figure Test Circuit
C, CAP
ACIT
ANCE (pF)
I
R
, REVERSE LEAKAGE (
A)
NOTES ON TESTING AND SPECIFICATIONS
Note1--C
C
andC T are measured using a capacitance
bridge(Boonton Electronics Model 75A or
equivalent).
Note2--Noise figure measured with diode under test in
tuned diode mount using UHF noise source and
local oscillator (LO) frequency of 1.0 GHz.The
LO power is adjusted for 1.0 mW. I
F
amplifier
NF = 1.5 dB, f = 30MHz, see Figure 5.
I
F
, FORWARD CURRENT (mA)
NF, NOISE FIGURE (dB)
1.0
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
30
40
50
60
70
80
90
100
110
120
130
100
10
1.0
0.1
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9
0.8
0.7
0.6
0
1.0
2.0
3.0
4.0
11
10
9
8
7
6
5
4
3
2
1
0.1
0.2
0.5
1.0
2.0
5.0
10
LOCAL
OSCILLATOR
V
R
= 3.0 Vdc
T
A
= 40C
LOCAL OSCILLATOR FREQUENCY = 1.0GHz
(Test Circuit Figure 5)
T
A
= 85C
T
A
= 25C
MMBD110T1
MMBD110T1
MMBD110T1
MMBD110T1
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
S13/3
MMDL101T1
PACKAGE DIMENSIONS
S O D 3 2 3
PLASTIC PACKAGE
CASE 47702
ISSUE A
K
A
D
B
1
2
J
NOTE 3
H
E
C
0.63 mm
0.025''
1.60 mm
0.063''
2.85 mm
0.112''
0.83 mm
0.033''
(
)
m m
inches
SOD323
Soldering Footprint
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH
SOLDER PLATING.
DIM
MILLIMETERS
INCHES
M I N
M A X
M I N
M A X
A
1.60
1.80
0.063
0.071
B
1.15
1.35
0.045
0.053
C
0.80
1.00
0.031
0.039
D
0.25
0.40
0.010
0.016
E
0.15 REF
0.006 REF
H
0.00
0.10
0.000
0.004
J
0.089
0.177
0.0035
0.0070
K
2.30
2.70
0.091
0.106
STYLE 1:
PIN 1.
CATHODE
2. ANODE
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