Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 1 of 7
Device NoDPT-032-022 Prepared date07-17-2004 Prepared byJaine Tsai
Technical Data Sheet
5mm Low Profile Photo Darlington-Transistor T-1 3/4
PDT323B-5
Features
Extra high radiant sensitivity
Very low temperature drift
Suitable for near infrared radiation
High sensitivity
Pb free
Descriptions
PDT323B-5 is an extra high sensitive monolithic
silicon epitaxial planar Darlington phototransistors.
Applications
Special light barriers and switch
Floppy disk drive
Optoelectronic switch
Any applications requiring high sensitivity at low light level
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
PDT Silicon
Black
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 2 of 7
Device NoDPT-032-022 Prepared date07-17-2004 Prepared byJaine Tsai
0.1
PDT323B-5
Package Dimensions
Notes: 1.All dimensions are in millimeters
2.Tolerances unless dimensions 0.25mm
Absolute Maximum Ratings (Ta=25)
Parameter Symbol
Rating
Units
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Collector-Voltage V
ECO
5 V
Collector Current
I
C
20 mA
Operating Temperature
Topr
-25 ~ +85
Storage Temperature
Tstg
-40 ~ +85
Lead Soldering Temperature
Tsol
260
Power Dissipation at (or
below)
25 Free Air Temperature
Pc 75 mW
Notes: *1:Soldering time5 seconds.
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 3 of 7
Device NoDPT-032-022 Prepared date07-17-2004 Prepared byJaine Tsai
PDT323B-5
Electro-Optical Characteristics (Ta=25)
Parameter Symbol
Condition
Min.
Typ.
Max.
Units
Rang Of Spectral Bandwidth
0.5
--- 840
---
1100
nm
Wavelength Of Peak Sensitivity
P
--- ---
940
---
nm
Collector Emitter
Breakdown Voltage
BV
CEO
I
C
=100A
Ee=0mW/cm
2
15
--- --- V
Emitter-Collector
Breakdown Voltage
BV
ECO
I
E
=10A
Ee=0mW/cm
2
5
--- --- V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
=15mA
Ee=1mW/cm
2
--- --- 1.0
V
Rise Time
t
r
--- 40 ---
Fall Time
t
f
V
CE
=5V
I
C
=10mA
RL=100
--- 60 ---
S
Collector Dark Current
I
CEO
Ee=0mW/cm
2
V
CE
=10V
--- ---
1000
nA
On State Collector Current
I
C(on)
Ee=1mW/cm
2
V
CE
=5V
3.3 4.0 --- mA
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 4 of 7
Device NoDPT-032-022 Prepared date07-17-2004 Prepared byJaine Tsai
0
600 700
0.2
0.4
0.6
0.8
Ta=25
O
C
1.0
1100
800 900 1000
1200
0
-25
20
40
50
0
25
85
75
100
60
80
100
20
0
0
40
10
20 30
60
50
70
100
60
40
80
140
120
160
2
20
0
0
40
10
20 30
60
50
70
100
60
40
80
140
120
160
2
2
0.5
1
3
5
C
0
2
4
6
8
PDT323B-5
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs. Fig.2 Spectral Sensitivity
Ambient Temperature
Fig.3 Relative Collector Current vs. Fig.4 Collector Current vs.
Ambient Temperature Irradiance
Everlight Electronics Co., Ltd. http:\\www.everlight.com Rev 1.3 Page: 5 of 7
Device NoDPT-032-022 Prepared date07-17-2004 Prepared byJaine Tsai
15
6.0
0
0
3.0
1
9.0
12
2
3
21
18
4
10
10
0
10
10
10
25
50
75
100
PDT323B-5
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs. Fig.6 Collector Current vs.
Ambient Temperature Collector-Emitter Voltage
PDF 
ZIP