EMS101-P1
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DC 6 GHz GaAs MMIC SPDT SWITCH
ISSUED DATE: 10-21-03
FEATURES
BROADBAND PERFORMANCE
HIGH ISOLATION
LOW INSERTION LOSS
LOW DC POWER CONSUMPTION
FAST SWITCHING SPEED
SI3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH RELIABILITY
Description
The EMA101-P is a GaAs IC single pole double throw broadband RF switch. It can be used for
broadband communications and instrument application. This device is packaged in a SO-8 surface
mount package and internally it can be terminated with 50ohm load or short circuit based on
requirement .The switch is controlled by the application of 0V/-5V signals to the control lines in
accordance with the truth table below.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOL
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
F
Operating frequency Range
DC
6
GHz
0/-5V Control; 50MHz
20
dBm
P1dB
Input Power at
1dB Gain
compression
0/-5V Control; 2GHz
26
dBm
Insertion Loss (DC-3GHz)
1
1.5
dB
Ls
(3-6GHz)
1.5
2
dB
Isolation (DC-3GHz)
30
32
dB
ISO
(3-6GHz)
25
28
dB
VSWR in Input VSWR
1.8
VSWR out Output VSWR
1.8
T
Switching Speed (50% control to 10%/90%RF)
3
8
nS
Note:
1. VSWR measured in low loss switch state
2. P1dB measured input power at which insertion loss compressed by 1dB
3. All measurement made in a 50Ohm system
EMS101-P1
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DC 6 GHz GaAs MMIC SPDT SWITCH
Package Outline
Electrical Schematic
Pin Description Switch Diagram
Pin Function
V1
V2
RFIN-RFOUT1
RFIN-RFOUT2
1
Ground
0V
-5V
Low Loss
Isolated
2
RF IN
-5V
0V
Isolated
Low Loss
3
Ground
4
Ground
5
RF OUT1
6
Control
V2
7
Control
V1
8
RF OUT2
Absolute maximum Rating
RF input power 31dBm
Operating temperature -40
o
C to +85
o
C
Storage temperature -65
o
C to 150
o
C
RFIN
V2
T
R
RFOUT2
T
R
RFOUT1
V1
Ground R: Reflective
Ground T: Terminated
PDF 
ZIP