2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
BC6391
6
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CER
Collector-Emitter Voltage at R
BE
=1K
100
V
V
CES
Collector-Emitter Voltage
100
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
1
A
P
C
Collector Power Dissipation
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
100
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA, I
B
= 0
80
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cut-off Current
V
CB
= 30V, I
E
= 0
100
nA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
10
A
h
FE1
h
FE2
h
FE3
DC Current Gain
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 500mA
25
100
25
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
0.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 2V, I
C
= 500mA
1
V
f
T
Current Gain Bandwidth Product
V
CE
= 5V, I
C
=10mA,
f = 50MHz
100
MHz
BC63916
Switching and Amplifier Applications
1. Emitter 2. Collector 3. Base
TO-92
1
Note: All package 97 or 98 transistors are leadformed
to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.
*
* ;
* Standard Option on 97 & 98 package code
Package Dimensions
BC6391
6
Dimensions in Millimeters
Rev. A, January 2003
TO-92
2003 Fairchild Semiconductor Corporation
2003 Fairchild Semiconductor Corporation
Rev. I2
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