2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BC635/
637/
639
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
PW=5ms, Duty Cycle=10%
Electrical Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CER
Collector-Emitter Voltage at R
BE
=1K
: BC635
: BC637
: BC639
45
60
100
V
V
V
V
CES
Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
100
V
V
V
V
CEO
Collector-Emitter Voltage
: BC635
: BC637
: BC639
45
60
80
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
1
A
I
CP
Peak Collector Current
1.5
A
I
B
Base Current
100
mA
P
C
Collector Power Dissipation
1
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC635
: BC637
: BC639
I
C
=10mA, I
B
=0
45
60
80
V
V
V
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
0.1
A
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
0.1
A
h
FE1
h
FE2
h
FE3
DC Current Gain : All
: BC635
: BC637/BC639
: All
V
CE
=2V, I
C
=5mA
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=500mA
25
40
40
25
250
160
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
0.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=2V, I
C
=500mA
1
V
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA,
f=50MHz
100
MHz
BC635/637/639
Switching and Amplifier Applications
Complement to BC636/638/640
1. Emitter 2. Collector 3. Base
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BC635/
637/
639
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
0
10
20
30
40
50
0
40
80
120
160
200
I
B
= 0.2 mA
I
B
= 0.4 mA
I
B
= 0.6 mA
I
B
= 0.8 mA
I
B
= 1.0 mA
I
B
= 1.2 mA
I
B
= 1.4 mA
I
B
= 1.6 mA
I
B
= 1.8 mA
I
C
[m
A], C
O
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
100
1000
10
100
1000
V
CE
= 2V
h
FE
, DC C
URRENT
GAI
N
I
C
[mA], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
CE
= 2V
I
C
[
m
A], COL
L
ECT
O
R CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
1
10
100
f=1MHz
C
ob
[p
F
], CAPA
C
I
T
A
NC
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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when properly used in accordance with instructions for use
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reasonably expected to cause the failure of the life support
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