www.docs.chipfind.ru
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45
0.040 (1.02)
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
0.50 (12.7)
MIN
0.255 (6.48)
Collector
(Case)
Base
Emitter
0.100 (2.54)
0.020 (0.51) 3X
1. Derate power dissipation linearly 3.00 mW/C above 25C ambient.
2. Derate power dissipation linearly 6.00 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
PACKAGE DIMENSIONS
FEATURES
Hermetically sealed package
Narrow reception angle
European "Pro Electron" registered
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Collector-Emitter Voltage
V
CEO
45
V
Collector-Base Voltage
V
CBO
45
V
Emitter-Base Voltage
V
EBO
5
V
Power Dissipation (T
A
= 25C)
(1)
P
D
300
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
600
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
E
C
B
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300279
3/13/01
1 OF 4
www.fairchildsemi.com
.01
.01
0.1
1.0
10
0.1
1.0
10
100
0.1
.01
0.1
1.0
10
1.0
10
100
V
CE
- COLLECTOR TO EMITTER VOLTAGE
I
L
- NORMALIZED LIGHT CURRENT
I
L
- NORMALIZED LIGHT CURRENT
Fig. 1 Light Current vs. Collector to Emitter Voltage
H - TOTAL IRRADIANCE IN mW/cm
2
Fig. 2 Normalized Light Current vs. Radiation
Ee = 20 mW/cm
2
10 mW/cm
2
5 mW/cm
2
2 mW/cm
2
1 mW/cm
2
Normalized to:
V
CE
= 5 V
Ee = 10 mW/cm
2
Normalized to:
V
CE
= 5 V
Ee = 10 mW/cm
2
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3/13/01
DS300279
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
I
C
= 10 mA, Ee = 0
BV
CEO
45
--
--
V
Emitter-Base Breakdown
I
E
= 100 A, Ee = 0
BV
EBO
5.0
--
--
V
Collector-Base Breakdown
I
C
= 100 A, Ee = 0
BV
CBO
45
--
--
V
Collector-Emitter Leakage
V
CE
= 10 V, Ee = 0
I
CEO
--
--
100
nA
Reception Angle at 1/2 Sensitivity
--
10
--
Deg.
On-State Collector Current BPW36
Ee = 0.5 mW/cm
2
I
C(ON)
1.0
--
--
mA
V
CE
= 5 V
(7)
On-State Collector Current BPW37
Ee = 0.5 mW/cm
2
I
C(ON)
0.5
--
--
mA
V
CE
= 5 V
(7)
Turn-On Time
I
C
= 2 mA, V
CC
= 10 V
t
on
--
8
--
s
R
L
= 100
Turn-Off Time
I
C
= 2 mA, V
CC
= 10 V
t
off
--
7
--
s
R
L
= 100
Saturation Voltage
I
C
= 1.0 mA, Ee = 3.0 mW/cm
2
V
CE(SAT)
--
--
0.40
V
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
TYPICAL PERFORMANCE CURVES
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
0.1
0.1
1.0
10.0
10
2
10
3
10
4
10
5
10
6
1.0
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.0
10
I
L
- NORMALIZED LIGHT CURRENT
I
L
- NORMALIZED D
ARK CURRENT
SWITCHING TIME
(s)
I
L
- NORMALIZED LIGHT CURRENT
Normalized to:
V
CE
= 5 V
Ee = 10 mW/cm
2
T
A
= 25C
Normalized to:
I
D
@ 25C
V
CEO
= 10 V
Normalized to:
CQX14 Input = 10 mA
V
CEO
= 10 V
I
L
= 100 A
T
A
= 25C
Normalized to:
V
CE
= 10 V
I
L
= 2 mA
t
ON
= t
OFF
= 5
s
R
L
= 100
R
L
= 100
R
L
= 10
R
L
= 1 k
-50
0
50
100
150
0.1
1.0
10
100
T
A
- TEMPERATURE (C)
I
L
- OUTPUT CURRENT (mA)
Fig. 3 Normalized Light Current vs. Temperature
Fig. 4 Switching Times vs. Output Current
0
25
50
75
100
125
150
55
35
15
25
45
65
85
105
5
T
A
- TEMPERATURE (C)
T
A
- TEMPERATURE (C)
Fig. 5 Dark Current vs. Temperature
Fig. 6 Normalized Light Current vs. Temperature
Both Emitter (CQX14) and Detector
(BPW36 or BPW37) at Same Temperature
CQX14
BPW36 OR
BPW37
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TYPICAL PERFORMANCE CURVES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
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