3
BSR17A
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
*BSR17A
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
C
E
B
SOT-23
Mark: U92
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSR17A
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10
A, I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1.0 mA, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 30 V, T
A
= 150
C
5.0
A
I
CEX
Collector-Cutoff Current
V
CE
= 30 V, V
EB
= 3.0 V
50
nA
I
BEX
Reverse Base Current
V
CE
= 30 V, V
EB
= 3.0 V
50
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
70
100
60
30
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Transition Frequency
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
300
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz
4.0
pF
C
eb
Emitter-Base Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
8.0
pF
h
ie
Input Impedance
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
1.0
10
k
h
fe
Small-Signal Current Gain
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
100
400
h
oe
Output Admittance
V
CE
= 10 V,I
C
= 1.0 mA,f=1.0 kHz
1.0
40
S
SWITCHING CHARACTERISTICS
t
d
Delay Time
I
C
= 10 mA, I
B1
= 1.0 mA,
V
EB
= 0.5 V
35
ns
t
r
Rise Time
35
ns
t
s
Storage Time
I
C
= 10 mA, I
B
on
= I
B
off
= 1.0 mA
200
ns
t
f
Fall Time
50
ns
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
BSR17A
NPN General Purpose Amplifier
(continued)
3
BSR17A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EMI
T
T
E
R ON VOL
T
A
GE
(
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
E
R VOL
T
A
G
E
(
V
)
BESA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
T
O
R-
E
M
I
TTE
R
VO
L
T
A
G
E
(
V
)
CESA
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
LL
ECT
O
R C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TY
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
POW
E
R DI
S
S
I
P
A
T
I
O
N (
m
W
)
D
o
SOT-23
Noise Figure vs Frequency
0.1
1
10
100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
NOI
S
E FI
G
URE (
d
B)
V = 5.0V
CE
I = 100
A, R = 500
C
S
I = 1.0 mA
R = 200
C
S
I = 50
A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A
C
I = 1.0 mA
C
S
I = 50
A
C
I = 5.0 mA
C
-
DEGR
EES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CURRE
NT GA
I
N
(
d
B)
V = 40V
CE
I = 10 mA
C
h
fe
fe
Turn-On Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
Rise Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
BSR17A
NPN General Purpose Amplifier
(continued)
3
BSR17A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Test Circuits
10 K
3.0 V
275
t
1
C
1
<
<
<
<
<
4.0 pF
Duty Cycle
=
=
=
=
=
2%
Duty Cycle
=
=
=
=
=
2%
<
<
<
<
<
1.0 ns
- 0.5 V
300 ns
10.6 V
10
<
<
<
<
<
t
1
<
<
<
<
<
500
s
10.9 V
- 9.1 V
<
<
<
<
<
1.0 ns
0
0
10 K
3.0 V
275
C
1
<
<
<
<
<
4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
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