2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
July 2005
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1,
CNY17-3,
CNY17-2,
CNY17-4 Phototransistor Optocoupler
s
CNY17-1, CNY17-3, CNY17-2, CNY17-4
Phototransistor Optocouplers
Features
CNY17-1/2/3 are also available in white package by
specifying -M suffix (eg. CNY17-2-M)
UL recognized (File # E90700)
VDE recognized
102497 for white package
Add option V for white package (e.g., CNY17-2V-M)
File #102497
Add option `300' for black package (e.g., CNY17-2.300)
File #94766
Current transfer ratio in select groups
High BV
CEO
--70V minimum
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Description
The CNY17 series consists of a Gallium Arsenide IRED
coupled with an NPN phototransistor.
White Package (-M Suffix)
Black Package (No -M Suffix)
Schematic
6
1
6
1
6
1
6
1
6
6
1
1
1
2
6
5 COL
4 EMITTER
BASE
ANODE
CATHODE
3
2
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1,
CNY17-3,
CNY17-2,
CNY17-4 Phototransistor Optocoupler
s
Electrical Characteristics
(T
A
= 25C Unless otherwise specified.)
Individual Component Characteristics
Parameters
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
T
STG
All
-55 to +150
C
Operating Temperature
T
OPR
All
-55 to +100
C
Lead Solder Temperature
T
SOL
All
260 for 10 sec
C
Total Device Power Dissipation @ 25C (LED plus detector)
Derate Linearly From 25C
P
D
-M
250
mW
non -M
260
-M
2.94
mW/C
non -M
3.50
EMITTER
Continuous Forward Current
I
F
-M
60
mA
non -M
90
Reverse Voltage
V
R
All
6
V
Forward Current - Peak (1 s pulse, 300 pps)
I
F
(pk)
-M
1.5
A
non -M
3.0
LED Power Dissipation 25C Ambient
Derate Linearly From 25C
P
D
-M
120
mW
non -M
135
-M
1.41
mW/C
non -M
1.8
DETECTOR
Detector Power Dissipation @ 25C
Derate Linearly from 25C
P
D
-M
150
mW
non -M
200
-M
1.76
mW/C
non -M
2.67
Parameters
Test Conditions
Symbol
Device
Min
Typ
Max
Units
EMITTER
Input Forward Voltage
I
F
= 60 mA
V
F
-M
1.35
1.65
V
I
F
= 10 mA
non -M
1.15
1.50
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
non -M
50
pF
-M
18
Reverse Leakage Current V
R
= 6 V
I
R
All
0.001
10
A
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
I
C
= 1.0 mA, I
F
= 0
I
C
= 10 A, I
F
= 0
I
E
= 100 A, I
F
= 0
BV
CEO
BV
CBO
BV
ECO
All
All
All
70
70
7
100
120
10
V
V
V
Leakage Current
Collector to Emitter
Collector to Base
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
I
CEO
I
CBO
All
All
1
50
20
nA
nA
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
C
CE
C
CB
C
EB
All
All
All
8
20
10
pF
pF
pF
3
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1,
CNY17-3,
CNY17-2,
CNY17-4 Phototransistor Optocoupler
s
Isolation Characteristics
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25C
Characteristic
Test Conditions
Symbol
Device
Min
Typ**
Max
Units
Input-Output Isolation Voltage
f = 60 Hz, t = 1 min.
V
ISO
Black Package
5300
Vac(rms)*
`-M' White Package
7500
Vac(pk)
Isolation Resistance
V
I-O
= 500 VDC
R
ISO
All
1011
Isolation Capacitance
V
I-O
= , f = 1 MHz
C
ISO
Black Package
0.5
pF
`-M' White Package
0.2
Transfer Characteristics
(T
A
= 25C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ Max Units
Current Transfer Ratio,
Collector to Emitter
I
F
= 10 mA, V
CE
= 5 V
CTR
CNY17-1/-1-M
40
80
%
CNY17-2/-2-M
63
125
CNY17-3/-3-M
100
200
CNY17-4
160
320
Saturation Voltage
I
F
= 10 mA, I
C
= 2.5 mA
V
CE(SAT)
All
.40
V
AC Characteristics
Test Conditions
Symbol
Device
Min
Typ Max Units
Non-Saturated Switching Times
Turn-On Time (Fig.19 and Fig.20)
R
L
= 100
, I
C
= 2 mA, V
CC
= 10 V
t
on
non -M
10
s
Turn-Off Time (Fig.19 and Fig.20)
R
L
= 100
, I
C
= 2 mA, V
CC
= 10 V
t
off
non -M
10
s
Delay Time (Fig.19 and Fig.20)
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
t
d
-M
5.6
s
Rise Time (Fig.19 and Fig.20)
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
t
r
-M
4.0
s
Storage Time (Fig.19 and Fig.20)
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
t
s
-M
4.1
s
Fall Time (Fig.19 and Fig.20)
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
t
f
-M
3.5
s
Saturated Switching Times
Turn-On Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CE
= 0.4 V
t
on
CNY17-1
5.5
s
I
F
= 10 mA, V
CE
= 0.4 V
CNY17-2,
CNY17-3,
CNY17-4
8.0
Rise-Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CE
= 0.4 V
t
r
CNY17-1
4.0
s
I
F
= 10 mA, V
CE
= 0.4 V
CNY17-2,
CNY17-3,
CNY17-4
6.0
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 K
CNY17-1-M
4.0
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 K
CNY17-2-M,
CNY17-3-M
6.0
Delay Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CC
= 5 V, R
L
=1 K
t
d
CNY17-1-M
5.5
s
I
F
= 10 mA, V
CC
= 5 V, R
L
=1 K
CNY17-2,
CNY17-3
8.0
Turn-Off Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CE
= 0.4 V
t
off
CNY17-1
34.0
ms
I
F
= 10 mA, V
CE
= 0.4 V
CNY17-2,
CNY17-3,
CNY17-4
39.0
4
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1,
CNY17-3,
CNY17-2,
CNY17-4 Phototransistor Optocoupler
s
Fall-Time (Fig. 19 and Fig. 20)
I
F
= 20 mA, V
CE
= 0.4V
t
f
CNY17-1
20.0
s
I
F
= 10 mA, V
CE
= 0.4V
CNY17-2,
CNY17-3,
CNY17-4
24.0
I
F
= 20 mA, V
CC
= 5V, R
L
= 1K
CNY17-1-M
20.0
I
F
= 10 mA, V
CC
= 5V, R
L
= 1K
CNY17-2-M,
CNY17-3-M,
24.0
Storage Time (Fig. 19 and Fig.
20)
I
F
= 20 mA, V
CC
= 5V, R
L
= 1K
t
s
CNY17-1-M
34.0
s
I
F
= 10 mA, V
CC
= 5V, R
L
= 1K
CNY17-2-M,
CNY17-3-M,
39.0
Transfer Characteristics
(T
A
= 25C Unless otherwise specified.) (Continued)
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ Max Units
5
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1,
CNY17-3,
CNY17-2,
CNY17-4 Phototransistor Optocoupler
s
Fig.1 Normalized CTR vs. Forward Current
(Black Package)
Fig.2 Normalized CTR vs. Forward Current
(White Package)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
0
5
10
15
20
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
= 5.0V
T
A
= 25C
Normalized to
I
F
= 10 mA
0
2
4
6
8
10
12
14
16
18
20
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
= 5.0V
T
A
= 25C
Normalized to
I
F
= 10 mA
Fig. 3 Normalized CTR vs. Ambient Temperature
(Black Package)
Fig. 4 Normalized CTR vs. Ambient Temperature
(White Package)
-75
-50
-25
0
25
50
75
100
125
NORMALIZED CTR
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to
I
F
= 10 mA
T
A
= 25C
I
F
= 10 mA
I
F
= 20 mA
T
A
- AMBIENT TEMPERATURE (C)
T
A
- AMBIENT TEMPERATURE (C)
-60
-40
-20
0
20
40
60
80
100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
= 5 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Normalized to
I
F
= 10 mA
T
A
= 25C
Fig. 5 CTR vs. RBE (Unsaturated)
(Black Package)
Fig. 6 CTR vs. RBE (Unsaturated)
(White Package)
R
BE
- BASE RESISTANCE (k
)
R
BE
- BASE RESISTANCE (k
)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 5.0 V
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 5.0 V
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
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