2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
UniFET
TM
February 2006
FDPF12N35
350V N-Channel MOSFET
Features
7.5A, 350V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 18 nC)
Low C
rss
( typical 15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
S
D
G
TO-220F
FDPF Series
G
S
D
Symbol
Parameter
FDPF12N35
Unit
V
DSS
Drain-Source Voltage
350
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
7.5
4.5
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
30
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
335
mJ
I
AR
Avalanche Current
(Note 1)
7.5
A
E
AR
Repetitive Avalanche Energy
(Note 1)
5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
50
0.35
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Min.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
2.5
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C/W
2
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
AS
= 7.5A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
7.5A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF12N35
FDPF12N35
TO-220F
-
-
50
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
350
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.35
--
V/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 350V, V
GS
= 0V
V
DS
= 280V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 3.75A
--
0.32
0.38
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 3.75A
(Note 4)
--
13
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
855
1110
pF
C
oss
Output Capacitance
--
135
175
pF
C
rss
Reverse Transfer Capacitance
--
15
25
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 175V, I
D
= 12A
R
G
= 25
(Note 4, 5)
--
30
70
ns
t
r
Turn-On Rise Time
--
180
370
ns
t
d(off)
Turn-Off Delay Time
--
35
80
ns
t
f
Turn-Off Fall Time
--
60
130
ns
Q
g
Total Gate Charge
V
DS
= 280V, I
D
= 12A
V
GS
= 10V
(Note 4, 5)
--
18
25
nC
Q
gs
Gate-Source Charge
--
5
--
nC
Q
gd
Gate-Drain Charge
--
8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 7.5A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 12A
dI
F
/dt =100A/
s
(Note 4)
--
270
--
ns
Q
rr
Reverse Recovery Charge
--
2.3
--
C
3
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
Dr
a
i
n Cur
r
en
t [
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250 s Pulse Test
I
D
,
D
r
ai
n
Cu
r
r
e
n
t
[
A
]
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(O
N)
[
],
Dr
ai
n-
So
ur
c
e
O
n
-
R
es
is
t
a
n
c
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
150
Notes :
1. V
GS
= 0V
2. 250 s Pulse Test
25
I
DR
,
Rever
s
e
Dr
ain
C
u
r
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apaci
t
an
c
e
s [
p
F]
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
V
DS
= 175V
V
DS
= 70V
V
DS
= 280V
Note : I
D
= 12A
V
GS
,
G
a
t
e
-S
ourc
e
V
o
lt
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(Nor
m
a
liz
e
d
)
D
r
ai
n-S
o
urce B
r
e
a
kd
ow
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 3.75 A
R
DS
(O
N
)
,
(
N
o
r
m
a
liz
ed
)
D
r
a
i
n-
So
urc
e
On-R
es
is
tan
c
e
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0
2
4
6
8
I
D
,
Dr
ain Cur
r
ent
[
A
]
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
DC
10 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Dra
i
n
C
u
rre
nt [A]
V
DS
, Drain-Source Voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
( t) = 2 .5
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t
),
T
herm
a
l
Re
spon
se
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
C
h
a
rg
e
V
G
S
1
0
V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
a
m
e
T
yp
e
a
s D
U
T
C
h
a
rg
e
V
G
S
1
0
V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
a
m
e
T
yp
e
a
s D
U
T
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
E
A
S
=
L
I
A
S
2
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
I
D
t
p
E
A
S
=
L
I
A
S
2
----
2
1
E
A
S
=
L
I
A
S
2
----
2
1
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
D U T
V
D S
+
_
D r iv e r
R
G
S a m e T y p e
a s D U T
V
G S
d v / d t c o n t r o lle d b y R
G
I
S D
c o n t r o lle d b y p u ls e p e r io d
V
D D
L
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D io d e
F o r w a r d V o lt a g e D r o p
V
S D
I
F M
, B o d y D io d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D io d e R e c o v e r y d v / d t
d i/ d t
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D U T
V
D S
+
_
D r iv e r
R
G
S a m e T y p e
a s D U T
V
G S
d v / d t c o n t r o lle d b y R
G
I
S D
c o n t r o lle d b y p u ls e p e r io d
V
D D
L
L
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D io d e
F o r w a r d V o lt a g e D r o p
V
S D
I
F M
, B o d y D io d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D io d e R e c o v e r y d v / d t
d i/ d t
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
7
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
Mechanical Dimensions
(7.00)
(0.70)
MAX1.47
(30
)
#1
3.30
0.1
0
15.80
0.20
15.87
0.20
6.68
0.20
9.75
0.30
4.70
0.20
10.16
0.20
(1.00x45
)
2.54
0.20
0.80
0.10
9.40
0.20
2.76
0.20
0.35
0.10
3.18
0.10
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
0.50
+0.10
0.05
TO-220F
Dimensions in Millimeters
8
www.fairchildsemi.com
FDPF12N35 Rev. A
FDPF12N35 350V N-Ch
annel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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