2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
KSH200
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
8
V
I
B
Base Current
1
A
I
C
Collector Current (DC)
5
A
I
CP
Collector Current (Pulse)
10
A
P
C
Collector Dissipation (T
C
= 25
C)
12.5
W
Collector Dissipation (T
a
= 25
C)
1.4
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CBO
(sus)
* Collector Emitter Sustaining Voltage
I
C
=100mA, I
B
=0
25
V
I
CEO
Collector Cut-off Current
V
CB
=40V, I
E
=0
100
nA
I
CBO
Collector Cut-off Current
V
EBO
=8V, I
C
=0
100
nA
I
EBO
Emitter Cut-off Current
V
CE
=1V, I
C
=500mA
70
h
FE
* DC Current Gain
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
45
10
180
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
I
C
=2A, I
B
=200mA
I
C
=5A, I
B
=1A
0.3
0.75
1.8
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
=5A, I
B
=2A
2.5
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
=1V, I
C
=2A
1.6
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=100mA
65
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=0.1MHz
80
pF
KSH200
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, " - I " Suffix)
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
KSH200
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
0.01
0.1
1
10
1
10
100
1000
V
CE
=2V
V
CE
=1V
h
FE
, DC C
URRE
NT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
V
CE
(sat)
V
BE
(sat)
I
C
=10I
B
V
CE
(s
a
t
), V
BE
(s
a
t
) [
V
],
S
A
TU
R
A
T
I
O
N
VO
L
T
A
G
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
1
10
100
1000
C
ob
[
p
F
]
,
CAP
A
CI
T
A
NC
E
V
CB
[V], COLLECTOR BASE VOLTAGE
0.01
0.1
1
10
0.01
0.1
1
10
t
D
t
R
V
CC
=30V
I
C
=10I
B
t
R
,t
D
[n
s], T
URN
O
N
T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
10
100
1000
t
F
t
STG
V
CC
=30V
I
C
=10I
B
I
B1
=-I
B2
t
ST
G
,t
F
[n
s
]
,
T
U
R
N
O
F
F
T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
100
DC
5m
s
1m
s
50
0
s
10
0
s
I
C
[A],
COL
L
ECT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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