2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH41C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test: PW
300
s, Duty Cycle
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
6
A
I
CP
Collector Current (Pulse)
10
A
I
B
Base Current
2
A
P
C
Collector Dissipation (T
C
=25
C)
20
W
Collector Dissipation (T
a
=25
C)
1.75
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
100
V
I
CEO
Collector Cut-off Current
V
CE
= 60V, I
B
= 0
50
A
I
CES
Collector Cut-off Current
V
CE
= 100V, V
BE
= 0
10
uA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
0.5
mA
h
FE
* DC Current Gain
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
30
15
75
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 6A, I
B
= 600mA
1.5
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= 6A, I
C
= 4A
2
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 500mA
3
MHz
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, "- I" Suffix)
Electrically Similar to Popular TIP41 and TIP41C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
2002 Fairchild Semiconductor Corporation
KSH41C
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
0.01
0.1
1
10
1
10
100
1000
V
CE
= 2V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
1
10
100
1000
C
ob
[pF
]
, C
A
PA
C
I
T
A
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.01
0.1
1
10
0.01
0.1
1
10
t
R
V
CC
= 30V
I
C
= 10.I
B
t
D
. V
BE
(off)=5V
t
R
, t
D
[
s], T
URN
ON
T
I
M
E
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
t
STG
t
F
t
F
, t
ST
G
[
s], T
URN
OF
F
T
I
ME
I
C
[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
100
5m
s
100
s
500
s
1m
s
DC
I
CP
(max)
I
C
(max)
I
C
[
A
]
,
CO
L
L
E
CT
O
R
CURR
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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