PN200 / MMBT200 / PN200A / MMBT200A
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CBO
Collector-Base Voltage
75
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
PN200A
*MMBT200A
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
SOT-23
Mark: N2 / N2A
C
B
E
TO-92
C
B
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
B
= 0
60
V
BV
CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
E
= 0
45
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 50 V, I
E
= 0
50
nA
I
CES
Collector Cutoff Current
V
CE
= 40 V, I
E
= 10
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
50
nA
f
T
Current Gain - Bandwidth Product
V
CE
= 20 V, I
C
= 20 mA
250
MHz
C
obo
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
6.0
pF
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V, 200
R
G
= 2.0 k
, f = 1.0 kHz 200A
5.0
4.0
dB
dB
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 1.0 V
200
200A
I
C
= 10 mA, V
CE
= 1.0 V
200
200A
I
C
= 100 mA, V
CE
= 1.0 V*
200A
I
C
= 150 mA, V
CE
= 5.0 V*
200
200A
80
240
100
300
100
100
100
450
600
350
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
0.2
0.4
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
0.85
1.0
V
V
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 68
0.1
1
10
100
300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
- COLLE
CT
OR EMITTE
R VOL
T
A
G
E
(V)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L P
U
LSED
CUR
REN
T
GA
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
PN200 / MMBT200 / PN200A / MMBT200A
Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
300
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
BA
SE
EMI
TTER
VO
L
T
A
G
E (V
)
C
BE
S
A
T
= 10
25 C
- 40 C
125 C
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
S
E
EM
I
T
TE
R O
N
VO
L
T
A
G
E
(
V
)
C
B
EON
V = 5V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- COLLE
CT
OR CU
RRENT (nA
)
A
CBO
V = 50V
CB
CE
R
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1
1
10
100
1000
70
75
80
85
90
95
RESISTANCE (k )
B
V
-
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
(V
)
PNP General Purpose Amplifier
(continued)
Collector Saturation Region
100
300
700
2000 4000
0
1
2
3
4
I - BASE CURRENT (uA)
V
-
CO
LL
E
C
T
O
R-
E
M
I
T
TE
R V
O
L
T
A
G
E (
V
)
CE
B
50 mA
300 mA
100 uA
Ta = 25C
Ic =
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
10
100
V - COLLECTOR VOLTAGE(V)
CA
P
A
CI
T
A
NC
E (p
F
)
Cib
Cob
f = 1.0 MHz
ce
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Gain Bandwidth Product
vs Collector Current
P 68
1
10
20
50
100 150
0
10
20
30
40
I - COLLECTOR CURRENT (mA)
f
- G
A
IN
B
A
N
D
WID
T
H
PR
O
D
U
C
T
(M
H
z
)
C
T
V = 5V
ce
Switching Times vs
Collector Current
10
20
30
50
100
200
300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TI
M
E
(nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
t
s
t
d
t
f
t
r
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P
-
PO
W
E
R
DI
SS
IP
A
T
I
O
N
(
m
W
)
D
o
TO-92
SOT-23
PDF 
ZIP