MPSH10 / MMBTH10
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100
A to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
MPSH10
MMBTH10
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current - Continuous
50
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3E
Symbol
Characteristic
Max
Units
MPSH10
*MMBTH10
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
MPSH10 / MMBTH10
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
I
C
= 1.0 mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
30
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
3.0
V
I
CBO
Collector Cutoff Current
V
CB
= 25 V, I
E
= 0
100
nA
I
EBO
Emitter Cutoff Current
V
EB
= 2.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 4.0 mA, V
CE
= 10 V
60
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 4.0 mA, I
B
= 0.4 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 4.0 mA, V
CE
= 10 V
0.95
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
650
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.7
pF
C
rb
Common-Base Feedback Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.35
0.65
pF
rb'C
c
Collector Base Time Constant
I
C
= 4.0 mA, V
CB
= 10 V,
f = 31.8 MHz
9.0
pS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
P 42
0.1
0.2
0.5
1
2
5
10
20
50
0
20
40
60
80
100
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
I
C
A
L
P
U
L
S
E
D
CURRE
N
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
Vce = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
20
0.05
0.1
0.15
0.2
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
ESA
T
25 C
C
= 10
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
P 42
0.1
1
10
20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
C
= 10
25 C
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
C
T
O
R
CU
RRE
N
T
(
n
A)
A
V
= 30V
CB
CBO
Base-Emitter ON Voltage vs
Collector Current
P 42
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E
(ON
)
C
V = 5V
CE
25 C
125 C
- 40 C
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
- PO
W
E
R
D
I
SSI
P
A
T
I
O
N
(m
W
)
D
o
TO-92
SOT-23
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Common Base Y Parameters vs. Frequency
Input Admittance
P 42 (BASE)
100
200
500
1000
-120
-80
-40
0
40
80
120
f - FREQUENCY (MHz)
Y
-
I
N
P
U
T
ADM
I
T
T
ANCE
(
m
m
h
o
s
)
ib
V = 10V
C E
I = 5 mA
C
g
ib
b
ib
Output Admittance
P 42 (BASE)
100
200
500
1000
0
2
4
6
8
10
12
f - FREQUENCY (MHz)
Y
-
O
U
T
P
UT
ADM
I
T
T
ANCE
(
m
m
h
o
s
)
ob
V = 10V
C E
I = 5 mA
C
g
ob
b
ob
Forward Transfer Admittance
100
200
500
1000
-120
-80
-40
0
40
80
120
f - FREQUENCY (MHz)
Y
-
F
O
RW
A
RD ADM
I
T
T
A
NC
E
(
m
m
h
o
s
)
fb
V = 10V
C E
I = 5 mA
C
g
fb
b
fb
Reverse Transfer Admittance
(
S )
100
200
500
1000
0
2
4
6
8
f - FREQUENCY (MHz)
Y
-
R
EVE
R
SE A
D
M
I
T
T
A
N
C
E
(
m
m
h
o
s
)
rb
V = 10V
C E
I = 5 mA
C
-g
rb
-b
rb
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Input Admittance
100
200
500
1000
0
4
8
12
16
20
24
f - FREQUENCY (MHz)
Y
-
I
N
P
U
T
ADM
I
T
T
ANCE
(
m
m
h
o
s
)
ie
V = 10V
C E
I = 2 mA
C
g
ie
b
ie
Output Admittance
P 42 (EMITTER)
100
200
500
1000
0
1
2
3
4
5
6
f - FREQUENCY (MHz)
Y
-
O
U
T
P
UT
ADM
I
T
T
ANCE
(
m
m
h
o
s
)
oe
V = 10V
C E
I = 2 mA
C
g
oe
b
oe
Forward Transfer Admittance
P 42 (EMITTER)
100
200
500
1000
-60
-40
-20
0
20
40
60
f - FREQUENCY (MHz)
Y
-
F
O
RW
ARD A
D
M
I
T
T
ANCE
(
m
m
h
o
s
)
fe
V = 10V
C E
I = 2 mA
C
g
fe
b
fe
Reverse Transfer Admittance
100
200
500
1000
0
0.2
0.4
0.6
0.8
1
1.2
f - FREQUENCY (MHz)
Y
-
RE
V
E
RS
E
ADM
I
T
T
ANCE
(
m
m
h
o
s
)
re
V = 10V
C E
I = 2 mA
C
-g
re
-b
re
PDF 
ZIP