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2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B
RF1K49156
6.3A, 30V, 0.030 Ohm, Logic Level, Single
N-Channel LittleFETTM Power MOSFET
This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49156.
Features
6.3A, 30V
r
DS(ON)
= 0.030
Temperature Compensating PSPICE
Model
On-Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49156
MS-012AA
RF1K49156
NOTE: When ordering, use the entire part number. For ordering in tape
and reel, add the suffix 96 to the part number, i.e., RF1K4915696.
SOURCE (2)
DRAIN (8)
NC (1)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SOURCE (3)
GATE (4)
BRANDING DASH
1
2
3
4
5
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49156 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
6.3
Refer to Peak Current Curve
A
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 13)
30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 12)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V,
V
GS
= 0V
T
A
= 25
o
C
-
-
1
A
T
A
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 6.3A, V
GS
= 5V, (Figures 9, 11)
-
-
0.030
Turn-On Time
t
ON
V
DD
= 15V, I
D
6.3A,
R
L
= 2.38
, V
GS
= 5V,
R
GS
= 25
(Figure 10)
-
-
165
ns
Turn-On Delay Time
t
d(ON)
-
35
-
ns
Rise Time
t
r
-
100
-
ns
Turn-Off Delay Time
t
d(OFF)
-
150
-
ns
Fall Time
t
f
-
95
-
ns
Turn-Off Time
t
OFF
-
-
300
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 24V,
I
D
= 6.3A,
R
L
= 3.81
(Figure 15)
-
52
65
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
29
37
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.8
2.3
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 14)
-
2030
-
pF
Output Capacitance
C
OSS
-
625
-
pF
Reverse Transfer Capacitance
C
RSS
-
105
-
pF
Thermal Resistance Junction to Ambient
R
JA
Pulse Width = 1s
Device Mounted on FR-4 Material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 6.3A
-
-
1.05
V
Reverse Recovery Time
t
rr
I
SD
= 6.3A, dI
SD
/dt = 100A/
s
-
-
58
ns
RF1K49156
2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
2
1
0
25
50
75
100
125
150
3
I
D
,
DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
7
6
5
4
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-1
10
0
10
1
10
2
0.01
10
0.1
1
10
-2
10
3
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
Z
JA
,
NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
0.01
1
100
10
0.1
0.1
I
D
,
DRAIN CURRENT (A)
DC
100ms
1s
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED, T
A
= 25
o
C
V
DSS
MAX = 30V
5ms
t, PULSE WIDTH (s)
200
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
100
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
RF1K49156
2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE TO SOURCE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
50
1
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
10
20
30
0
1
2
3
4
5
V
GS
= 2.5V
40
50
V
GS
= 3V
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
T
A
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
6.0
7.5
1.5
0
10
20
30
40
50
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D(ON)
,
ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
150
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
,
ON-ST
A
TE RESIST
ANCE (m
)
I
D
= 6.3A
I
D
= 1.75A
I
D
= 15A
3.0
2.0
I
D
= 3.5A
PULSE DURATION = 80
s
V
DD
= 15V
DUTY CYCLE = 0.5% MAX
100
20
30
40
50
0
300
250
200
150
50
0
10
SWITCHING TIME
(ns)
RGS, GATE TO SOURCE RESISTANCE (
)
V
DD
= 15V, I
D
= 6.3A, R
L
= 2.38
t
r
t
D(ON)
t
D(OFF)
t
f
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED ON RESIST
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
s
V
GS
= 5V, I
D
= 6.3A
DUTY CYCLE = 0.5% MAX
RF1K49156
2002 Fairchild Semiconductor Corporation
RF1K49156 Rev. B
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
2500
0
0
5
10
15
20
25
C,
CAP
A
CIT
ANCE (pF)
C
RSS
500
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2000
1500
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
30
22.5
15
7.5
0
20
I
G REF
(
)
I
G ACT
(
)
-------------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
-------------------------
5.00
3.75
2.50
1.25
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
,
DRAIN-SOURCE
V
O
L
T
A
GE (V)
V
GS
,
GA
TE-SOURCE
V
O
L
T
A
GE (V)
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
R
L
= 4.76
I
G(REF)
= 0.65mA
V
GS
= 5V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49156
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