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Электронный компонент: RFG45N06

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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1995
3-33
S E M I C O N D U C T O R
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
45
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
AM
125
A
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
131
0.877
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55 to +175
o
C
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
45A, 60V
r
DS(ON)
= 0.028
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49028.
Symbol
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06
TO-262AA
F1S45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM
9A.
D
G
S
File Number
3574.2
3-34
Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= +25
o
C
-
-
1
A
T
C
= +150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 45A, V
GS
= 10V
-
-
0.028
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 45A
R
L
= 0.667
, V
GS
= +10V
R
GS
= 3.6
-
-
120
ns
Turn-On Delay Time
t
D(ON)
-
12
-
ns
Rise Time
t
R
-
74
-
ns
Turn-Off Delay Time
t
D(OFF)
-
37
-
ns
Fall Time
t
F
-
16
-
ns
Turn-Off Time
t
OFF
-
-
80
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 20V
V
DD
= 48V,
I
D
= 45A,
R
L
= 1.07
-
125
150
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0 to 10V
-
67
80
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to 2V
-
3.7
4.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
2050
-
pF
Output Capacitance
C
OSS
-
600
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
80
o
C/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 45A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 45A, dI
SD
/dt = 100A/
s
-
-
125
ns
3-35
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
FIGURE 1. SAFE- OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
400
100
10
1
1
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
s
10ms
100ms
DC
V
DSS
MAX = 60V
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE
Z
JC
, NORMALIZED
P
DM
t
1
t
2
50
40
30
20
10
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
------------------------
=
40
T
C
= +25
o
C
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
125
100
75
50
25
0
0.0
1.5
3.0
4.5
6.0
7.5
I
D
, DRAIN CURRENT (A)
V
DS,
DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 250
s, T
C
= +25
o
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D(ON)
,
ON ST
A
TE DRAIN CURRENT (A)
125
100
75
50
25
0
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
+25
o
C
-55
o
C
V
DD
= 15V
+175
o
C
3-36
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250
s, V
GS
= 10V, I
D
= 45A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
r
DS(ON)
, NORMALIZED ON RESIST
ANCE
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
160
120
200
THRESHOLD VOL
T
AGE
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS(TH)
, NORMALIZED GA
TE
I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
BV
DSS
,
NORMALIZED DRAIN-T
O-SOURCE
BREAKDOWN VOL
T
AGE
T
J,
JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
POWER DISSIP
A
TION MUL
TIPLIER
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
5
10
15
20
25
C
,
CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
60
45
30
15
0
10
7.5
5.0
2.5
0
V
GS
,
GA
TE-SOURCE VOL
T
AGE (V)
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.33
I
G(REF)
= 1.5mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN SOURCE VOL
T
AGE (V)
3-37
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
STARTING T
J
= +150
o
C
STARTING T
J
= +25
o
C
300
100
10
1
0.01
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS
,
A
V
ALANCHE CURRENT (A)
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS