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2002 Fairchild Semiconductor Corporation
SGR5N60RUF Rev. A1
IGBT
S
G
R5N60RUF
D-PAK
SGR5N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10us @ T
C
= 100
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 5A
High input impedance
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1" squre PCB (FR4 or G-10 Material)
Symbol
Description
SGR5N60RUF
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
8
A
Collector Current
@ T
C
= 100
C
5
A
I
CM (1)
Pulsed Collector Current
15
A
T
SC
Short Circuit Withstand Time
@ T
C
= 100
C
10
us
P
D
Maximum Power Dissipation
@ T
C
= 25
C
60
W
Maximum Power Dissipation
@ T
C
= 100
C
25
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case
--
2.0
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
--
50
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
G E
C
SGR5N60RUF Rev. A1
S
G
R5N60RUF
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 5mA, V
CE
= V
GE
5.0
6.0
8.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 5A
,
V
GE
= 15V
--
2.2
2.8
V
I
C
= 8A
,
V
GE
= 15V
--
2.5
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
354
--
pF
C
oes
Output Capacitance
--
67
--
pF
C
res
Reverse Transfer Capacitance
--
14
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 5A,
R
G
= 40
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
13
--
ns
t
r
Rise Time
--
24
--
ns
t
d(off)
Turn-Off Delay Time
--
34
50
ns
t
f
Fall Time
--
136
200
ns
E
on
Turn-On Switching Loss
--
88
--
uJ
E
off
Turn-Off Switching Loss
--
107
--
uJ
E
ts
Total
Switching
Loss
--
195
280
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 5A,
R
G
= 40
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
13
--
ns
t
r
Rise Time
--
26
--
ns
t
d(off)
Turn-Off Delay Time
--
40
60
ns
t
f
Fall Time
--
250
350
ns
E
on
Turn-On Switching Loss
--
103
--
uJ
E
off
Turn-Off Switching Loss
--
220
--
uJ
E
ts
Total
Switching
Loss
--
323
--
uJ
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
C
10
--
--
us
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 5A,
V
GE
= 15V
--
16
24
nC
Q
ge
Gate-Emitter Charge
--
3
6
nC
Q
gc
Gate-Collector Charge
--
7
14
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
SGR5N60RUF Rev. A1
S
G
R5N60RUF
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
5
10
15
20
25
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
Col
l
ec
tor
Cu
r
r
e
n
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
1
10
0
4
8
12
16
20
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
------
Co
l
l
e
ct
or
C
u
r
r
ent,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10A
5A
I
C
= 3A
Common Emitter
V
GE
= 15V
C
o
l
l
e
c
to
r - E
m
i
tte
r
V
o
lt
a
ge,
V
CE
[V
]
Case Temperature, T
C
[
]
0
2
4
6
8
10
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 12W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
o
a
d
C
u
r
r
ent [A
]
0
4
8
12
16
20
0
4
8
12
16
20
10A
5A
I
C
= 3A
Common Emitter
T
C
= 25
Col
l
ect
o
r
-
Em
i
t
t
e
r
Vol
t
ag
e,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
10A
5A
I
C
= 3A
Co
l
l
ec
t
o
r
-
Em
i
t
t
e
r Vo
l
t
ag
e,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
SGR5N60RUF Rev. A1
S
G
R5N60RUF
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
100
200
300
400
500
600
700
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
a
pac
i
t
a
n
c
e
[
p
F]
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 5A
T
C
= 25
T
C
= 125
------
Ton
Tr
S
w
itc
h
in
g
T
i
m
e
[
n
s
]
Gate Resistance, R
G
[
]
10
100
100
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 5A
T
C
= 25
T
C
= 125
------
S
w
i
t
c
h
i
ng Ti
m
e
[ns]
Gate Resistance, R
G
[
]
10
100
10
100
1000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 5A
T
C
= 25
T
C
= 125
------
Sw
i
t
ch
i
n
g
Lo
ss
[u
J]
Gate Resistance, R
G
[
]
3
4
5
6
7
8
9
10
10
100
Ton
Tr
Common Emitter
V
GE
=
15V, R
G
= 40
T
C
= 25
T
C
= 125
------
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
3
4
5
6
7
8
9
10
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
15V, R
G
= 40
T
C
= 25
T
C
= 125
------
S
w
it
c
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
SGR5N60RUF Rev. A1
S
G
R5N60RUF
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
1
10
100
1000
1
10
Safe Operating Area
V
GE
= 20V, T
C
= 100
40
C
o
ll
ect
o
r
C
u
rre
n
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
3
4
5
6
7
8
9
10
100
1000
Eon
Eoff
Common Emitter
V
GE
=
15V, R
G
= 40
T
C
= 25
T
C
= 125
------
S
wit
ching
L
o
s
s
[
u
J
]
Collector Current, I
C
[A]
0
3
6
9
12
15
18
0
3
6
9
12
15
200V
300V
V
CC
= 100V
Common Emitter
R
L
= 60
T
C
= 25
G
a
te
-
E
m
it
ter
V
o
l
t
ag
e
,
V
GE
[V
]
Gate Charge, Q
g
[nC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l
Resp
o
n
se, Zth
j
c [
/W
]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
0.1
1
10
100
1000
0.01
0.1
1
10
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50
Ic MAX. (Continuous)
Ic MAX. (Pulsed)
DC Operation
1
100us
50us
Col
l
ec
t
o
r
Cu
r
r
en
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
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