Si3443DV
Si3443DV, REV A
Si3443DV
P-Channel 2.5V Specified PowerTrench
MOSFET
April 2001
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain Current
- Continuous
(Note 1)
-4
A
Drain Current
- Pulsed
(Note 1a)
-20
P
D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.443 Si3443DV
7''
8mm
3000
units
Features
-4 A, -20 V. R
DS(ON)
= 0.065
@ V
GS
= -4.5 V
R
DS(ON)
= 0.100
@ V
GS
= -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
3
5
6
4
1
2
3
D
D
D
S
D
G
SuperSOT -6
TM
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
Load switch
Battery protection
Power management
Si3443DV
Si3443DV, REV A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A, Referenced to 25
C
-16
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
A
-0.4
-0.7
-1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
A, Referenced to 25
C
2.5
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -4.5 V, I
D
= -4 A
V
GS
= -4.5 V, I
D
= -4 A, T
J
=125
C
V
GS
= -2.5 V, I
D
= -3.2 A
0.054
0.076
0.077
0.065
0.105
0.100
I
D(on)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-10
A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -4 A
9
S
Dynamic Characteristics
C
iss
Input Capacitance
640
pF
C
oss
Output Capacitance
180
pF
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V
f = 1.0 MHz
90
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
11
20
ns
t
r
Turn-On Rise Time
19
30
ns
t
d(off)
Turn-Off Delay Time
26
42
ns
t
f
Turn-Off Fall Time
V
DD
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, R
GEN
= 6
35
55
ns
Q
g
Total Gate Charge
7.2
10
nC
Q
gs
Gate-Source Charge
1.7
nC
Q
gd
Gate-Drain Charge
V
DS
= -10 V, I
D
= -4 A
V
GS
= -4.5 V,
1.6
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.75
-1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) 78
C/W when mounted on a 1.0 in
2
pad of 2 oz. copper.
b) 156
C/W when mounted on a minimum pad of 2 oz.copper.
Si3443DV
Si3443DV, REV A
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
5
10
15
20
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRAI
N-
S
O
URCE
C
URRE
NT (
A
)
V
GS
= -4.5V
-2.5V
-3.5V
-3.0V
-2.0V
-1.5V
0.8
1
1.2
1.4
1.6
0
4
8
12
16
20
- I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NOR
M
A
L
I
Z
E
D
DRAI
N-
S
O
URCE
ON-
RE
S
I
S
T
ANCE
V
GS
= -2.5V
-3.5V
-4.5V
-3.0V
-4.0V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMA
LI
Z
E
D
DR
AIN
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= - 4A
V
GS
= - 4.5V
0
0.05
0.1
0.15
0.2
0.25
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-
R
E
S
I
S
TANCE
(
O
HM)
I
D
= -2A
T
A
= 125
o
C
T
A
= 25
o
C
0
2
4
6
8
10
0.4
0.8
1.2
1.6
2
2.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N
C
URRE
NT
(
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, RE
V
E
RS
E
DRA
IN CURRE
NT (
A
)
T = 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Si3443DV
Si3443DV, REV A
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TR
A
N
S
I
E
N
T
TH
E
R
M
A
L R
E
S
I
S
T
A
N
C
E
r
(
t
)
, NO
RM
A
L
IZ
E
D
E
F
F
E
CT
IV
E
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 156C/W
T - T = P * R (t)
A
J
P(pk)
t
1
t
2
JA
JA
JA
JA
0
1
2
3
4
5
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
POW
ER
(W
)
SINGLE PULSE
R
JA
= 156
o
C/W
T
A
= 25
o
C
0
1
2
3
4
5
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-V
GS
,
GA
T
E
-SOU
R
C
E
VO
L
T
A
G
E (V)
I
D
= -4A
V
DS
= -5V
-10V
-15V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURRE
NT (A)
DC
1s
100ms
10ms
1ms
100
s
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 156
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
0
250
500
750
1000
1250
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
P
A
CI
TA
NC
E
(
pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PACMANTM
POPTM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
SMART STARTTM
Star* PowerTM
StealthTM
FAST
FASTrTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MICROWIRETM
OPTOLOGICTM
OPTOPLANARTM
Rev. H1
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
UHCTM
UltraFET
VCXTM
PDF 
ZIP