MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
· Typical 2-Carrier W-CDMA Performance: V

= 28 Volts,

= 610 mA, P

out

= 14 Watts Avg.,

Full Frequency Band, Channel

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain -- 15.5 dB

Drain Efficiency -- 26%

IM3 @ 10 MHz Offset -- -37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset -- -40 dBc in 3.84 MHz Bandwidth

· Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW

Output Power

Features
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Internally Matched for Ease of Use
· Qualified Up to a Maximum of 32 V

Operation

· Integrated ESD Protection
· Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

· 200_C Capable Plastic Package
· N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 60 W CW

Case Temperature 76°C, 14 W CW

0.89
1.04

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S21060N

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

MRF6S21060NR1

MRF6S21060NBR1

2110-2170 MHz, 14 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S21060NR1

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

MRF6S21060NR1 MRF6S21060NBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

Adc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

Adc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

Adc

On Characteristics (DC)

Gate Threshold Voltage

= 10 Vdc, I

= 200 Adc)

GS(th)

1.5

2.2

2.5

Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 610 mAdc)

GS(Q)

2.8

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2.0 Adc)

DS(on)

0.3

Vdc

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

1.5

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 610 mA, P

out

= 14 W Avg., f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

13.5

15.5

16.5

Drain Efficiency

24.5

Intermodulation Distortion

IM3

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

-40

-38

dBc

Input Return Loss

IRL

-14

-10

1. Part is internally matched both on input and output.

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic

Z10

0.270 x 0.300 Microstrip

Z11

0.230 x 0.080 Microstrip

Z12

0.310 x 0.300 Microstrip

Z13

0.830 x 0.080 Microstrip

Z14

0.200 x 0.080 Microstrip

Z15

1.000 x 0.080 Microstrip

Z16

1.100 x 0.070 Microstrip

PCB

Arlon AD250, 0.030,

= 2.5

0.250 x 0.080 Microstrip

0.860 x 0.080 Microstrip

0.300 x 0.405 Microstrip

0.350 x 0.080 Microstrip

0.350 x 0.755 Microstrip

0.680 x 0.080 Microstrip

0.115 x 0.755 Microstrip

0.115 x 1.000 Microstrip

0.240 x 1.000 Microstrip

BIAS

SUPPLY

OUTPUT

INPUT

DUT

Z10

Z11

Z12

Z13

Z14

Z15

Z16

SUPPLY

C10

C11

Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

100 nF Chip Capacitor

CDR33BX104AKWS

Kemet

C2, C7

4.7 pF Chip Capacitors

100B4R7CW

ATC

C3, C8, C9

6.8 pF Chip Capacitors

100B6R8CW

ATC

C4, C5, C6, C10, C11

10 F, 35 V Chip Capacitors

GRM55DR61H106KA88L

Murata

1 kW Chip Resistor

10 kW Chip Resistor

10 W Chip Resistor

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

IM3 (dBc), ACPR (dBc)

- 25

- 5

- 10

- 20

2220

2060

IRL

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2-Carrier W-CDMA Broadband Performance @ P

out

= 14 Watts Avg.

2200

2180

2160

2140

2120

2100

2080

- 46

- 38

- 40

- 44

, DRAIN

EFFICIENCY (%)

15.8

15.6

15.4

15.2

14.8

14.6

14.4

14.2

- 42

- 36

- 15

= 28 Vdc, P

out

= 14 W (Avg.)

= 610 mA, 2- Carrier W- CDMA

10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)

, POWER GAIN (dB)

IRL, INPUT RETURN LOSS (dB)

IM3 (dBc), ACPR (dBc)

- 24

- 6

- 9

- 15

2220

2060

IRL

ACPR

IM3

f, FREQUENCY (MHz)

Figure 4. 2-Carrier W-CDMA Broadband Performance @ P

out

= 28 Watts Avg.

2200

2180

2160

2140

2120

2100

2080

15.6

- 34

- 28

- 30

- 32

, DRAIN

EFFICIENCY (%)

15.4

15.2

14.8

14.6

14.4

14.2

- 26

- 12

= 28 Vdc, P

out

= 28 W (Avg.)

= 610 mA, 2- Carrier W- CDMA

10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)

Figure 5. Two-Tone Power Gain versus

Output Power

= 915 mA

763 mA

out

, OUTPUT POWER (WATTS) PEP

200

, POWER GAIN (dB)

610 mA

458 mA

305 mA

100

= 28 Vdc, f1 = 2135 MHz, f2 = 2145

MHz

Two- Tone Measurements, 10 MHz Tone Spacing

Figure 6. Third Order Intermodulation Distortion

versus Output Power

- 10

- 20

- 30

- 40

200

- 60

- 50

out

, OUTPUT POWER (WATTS) PEP

INTERMODULA

TION DIST

TION (dBc)

IMD, THIRD ORDER

= 305 mA

915 mA

763 mA

458 mA

610 mA

= 28 Vdc, f1 = 2135 MHz, f2 = 2145

MHz

Two- Tone Measurements, 10 MHz Tone Spacing

100

- 18

- 21

RF Device Data

Freescale Semiconductor

MRF6S21060NR1 MRF6S21060NBR1

TYPICAL CHARACTERISTICS

200

out

, OUTPUT POWER (WATTS) CW

, DRAIN EFFICIENCY (%)

, POWER GAIN (dB)

= 28 Vdc

= 610 mA

f = 2140 MHz

IM3 (dBc), ACPR (dBc)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

- 60

- 10

0.1

7th Order

TWO- TONE SPACING (MHz)

= 28 Vdc, P

out

= 60 W (PEP), I

= 610 mA

Two- Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz

5th Order

3rd Order

- 20

- 30

- 40

- 50

100

Figure 8. Pulse CW Output Power versus

Input Power

Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain

and Drain Efficiency versus Output Power

- 60

out

, OUTPUT POWER (WATTS) AVG.

- 20

- 30

200

- 40

P3dB = 49.986 dBm (99.68 W)

, INPUT POWER (dBm)

= 28 Vdc, I

= 610 mA

Pulsed CW, 8

sec(on), 1 msec(off)

f = 2140 MHz

Actual

Ideal

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

Figure 11. Power Gain versus Output Power

out

, OUTPUT POWER (WATTS) CW

IM3

, DRAIN EFFICIENCY (%), G

, POWER GAIN (dB)

IMD, INTERMODULA

TION DIST

TION (dBc)

out

, OUTPUT POWER (dBm)

, POWER GAIN (dB)

= 12 V

120

= 610 mA

f = 2140 MHz

- 50

ACPR

- 10

P1dB = 49.252 dBm (84.18 W)

- 30

= - 30

- 30

100

- 30

100

= 28 Vdc, I

= 610 mA

f1 = 2135 MHz, f2 = 2145 MHz
2- Carrier W- CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

W-CDMA TEST SIGNAL

210

, JUNCTION TEMPERATURE (

°C)

Figure 12. MTTF Factor versus Junction Temperature

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to
better than

±10% of the theoretical prediction for metal failure. Divide

MTTF factor by I

for MTTF in a particular application.

120

140

160

180 190

MTTF

F
ACT

OR (HOURS x AMPS

)

100

110

130

150

170

200

0.0001

100

PEAK- TO- AVERAGE (dB)

Figure 13. CCDF W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single-Carrier Test Signal

0.1

0.01

0.001

Figure 14. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

3.84 MHz
Channel BW

- IM3 in

3.84 MHz BW

+IM3 in
3.84 MHz BW

PROBABILITY (%)

(dB)

+20

+30

- 10

- 40

- 50

- 60

- 70

- 80

- 20

- 5

- 10

- 15

- 20

- 25

- 30

- ACPR in

3.84 MHz BW

+ACPR in
3.84 MHz BW

W- CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @

±5 MHz Offset. IM3 Measured in

3.84 MHz Bandwidth @

±10 MHz Offset. PAR =

8.5 dB @ 0.01% Probability on CCDF

RF Device Data

Freescale Semiconductor

MRF6S21060NR1 MRF6S21060NBR1

PACKAGE DIMENSIONS

CASE 1486-03

ISSUE C

DATUM
PLANE

BOTTOM VIEW

PIN 5

NOTE 8

DRAIN LEAD

aaa

NOTES:

1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

3. DATUM PLANE -H- IS LOCATED AT THE TOP OF

LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.

4. DIMENSIONS

"D" AND "E1" DO NOT INCLUDE

MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS

"D" AND "E1" DO

INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUM PLANE -H-.

5. DIMENSION

"b1" DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE

"b1" DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. DATUMS -A- AND -B- TO BE DETERMINED AT

DATUM PLANE -H-.

7. DIMENSION A2 APPLIES WITHIN ZONE

"J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA

OF THE HEAT SLUG.

ZONE J

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

.100

.104

2.54

2.64

INCHES

.039

.043

0.99

1.09

.040

.042

1.02

1.07

.712

.720

18.08

18.29

.688

.692

17.48

17.58

.011

.019

0.28

0.48

.600

- - -

15.24

- - -

.551

.559

14.2

.353

.357

8.97

9.07

.132

.140

3.35

3.56

.124

.132

3.15

3.35

.270

- - -

6.86

- - -

.164

.170

4.17

4.32

.007

.011

0.18

0.28

.025 BSC

.106 BSC

0.64 BSC

2.69 BSC

STYLE 1:

PIN 1. DRAIN

2. DRAIN
3. GATE
4. GATE
5. SOURCE

aaa

.004

0.10

GATE LEAD

SEATING
PLANE

ÇÇÇÇÇÇ

NOTE 7

.346

.350

8.79

8.89

TO-270 WB-4

PLASTIC

MRF6S21060NR1

RF Device Data

Freescale Semiconductor

MRF6S21060NR1 MRF6S21060NBR1

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Document Number: MRF6S21060N

Rev. 3, 5/2006

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6S21060N

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF6S21060N