MRF9060LR1 MRF9060LSR1

5-1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 26 volt base station equipment.
· Typical Two-Tone Performance at 945 MHz, 26 Volts

Output Power -- 60 Watts PEP
Power Gain -- 17 dB
Efficiency -- 40%
IMD -- -31 dBc

· Integrated ESD Protection
· Designed for Maximum Gain and Insertion Phase Flatness
· Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

· Excellent Thermal Stability
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
· Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

DSS

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, + 15

Vdc

Total Device Dissipation @ T

= 25°C

MRF9060LR1

Derate above 25°C

MRF9060LSR1

159

0.91

219

1.25

W/°C

Storage Temperature Range

stg

-65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF9060LR1
MRF9060LSR1

1.1
0.8

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9060

Rev. 8, 12/2004

Freescale Semiconductor

Technical Data

MRF9060LR1

MRF9060LSR1

945 MHz, 60 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B-05, STYLE 1

NI-360

MRF9060LR1

CASE 360C-05, STYLE 1

NI-360S

MRF9060LSR1

5-2

RF Device Data

Freescale Semiconductor

MRF9060LR1 MRF9060LSR1

Table 4. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 65 Vdc, V

= 0 Vdc)

DSS

µAdc

Zero Gate Voltage Drain Leakage Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 200 µAdc)

GS(th)

2.9

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 450 mAdc)

GS(Q)

3.7

Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 1.3 Adc)

DS(on)

0.17

0.4

Vdc

Forward Transconductance

= 10 Vdc, I

= 4 Adc)

5.3

Dynamic Characteristics

Input Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

iss

Output Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

oss

Reverse Transfer Capacitance

= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

(continued)

MRF9060LR1 MRF9060LSR1

5-3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics

= 25°C unless otherwise noted)

(continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two-Tone Common-Source Amplifier Power Gain

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Two-Tone Drain Efficiency

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

3rd Order Intermodulation Distortion

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

-31

-28

dBc

Input Return Loss

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

-16

-9

Two-Tone Common-Source Amplifier Power Gain

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

Two-Tone Drain Efficiency

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

3rd Order Intermodulation Distortion

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

IMD

-31

dBc

Input Return Loss

= 26 Vdc, P

out

= 60 W PEP, I

= 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)

IRL

-16

Power Output, 1 dB Compression Point

= 26 Vdc, P

out

= 60 W CW, I

= 450 mA,

f1 = 945.0 MHz)

1dB

Common-Source Amplifier Power Gain

= 26 Vdc, P

out

= 60 W CW, I

= 450 mA,

f1 = 945.0 MHz)

Drain Efficiency

= 26 Vdc, P

out

= 60 W CW, I

= 450 mA,

f1 = 945.0 MHz)

Output Mismatch Stress

= 26 Vdc, P

out

= 60 W CW, I

= 450 mA,

f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)

No Degradation In Output Power

5-4

RF Device Data

Freescale Semiconductor

MRF9060LR1 MRF9060LSR1

INPUT

Figure 1. 945 MHz Broadband Test Circuit Schematic

OUTPUT

Z15

Z17

Z10

0.360 x 0.270 Microstrip

Z11

0.060 x 0.270 Microstrip

Z12

0.110 x 0.060 Microstrip

Z13

0.330 x 0.060 Microstrip

Z14

0.230 x 0.060 Microstrip

Z15

0.740 x 0.060 Microstrip

Z16

0.130 x 0.060 Microstrip

Z17

0.340 x 0.060 Microstrip

PCB

Taconic RF-35-0300, 30 mil,

= 3.55

0.240 x 0.060 Microstrip

0.500 x 0.100 Microstrip

0.180 x 0.270 Microstrip

0.350 x 0.270 Microstrip

0.270 x 0.520 x 0.140 Taper

0.170 x 0.520 Microstrip

0.410 x 0.520 Microstrip

0.060 x 0.520 Microstrip

Z14

Z16

C14

C17

C13

C16

C15

Z13

Z12

Z10

C10

C11

C12

DUT

Z11

Table 5. 945 MHz Broadband Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Short Ferrite Bead

95F786

Newark

Long Ferrite Bead

95F787

Newark

C1, C7, C13, C14

47 pF Chip Capacitors

100B470JP 500X

ATC

C2, C3, C11

0.8-8.0 Gigatrim Variable Capacitors

44F3360

Newark

C4, C5, C8, C9

10 pF Chip Capacitors

100B100JP 500X

ATC

C6, C15, C16

10 mF, 35 V Tantalum Chip Capacitor

93F2975

Newark

C10

3.0 pF Chip Capacitor

100B3R0JP 500X

ATC

C12

0.5 pF Chip Capacitor (MRF9060)
0.7 pF Chip Capacitor (MRF9060S)

100B0R5BP 500X
100B0R7BP 500X

ATC
ATC

C17

220 mF Electrolytic Chip Capacitor

14F185

Newark

L1, L2

12.5 nH Inductors

A04T-5

Coilcraft

N1, N2

N-Type Panel Mount, Stripline

3052-1648-10

Avnet

WB1, WB2

10 mil Brass Wear Blocks

5-6

RF Device Data

Freescale Semiconductor

MRF9060LR1 MRF9060LSR1

TYPICAL CHARACTERISTICS

100

-70

0.1

INTERMODULA

TION DIST

TION (dBc)

IMD,

-10

-20

-30

-40

-50

-60

100

out

, OUTPUT POWER (WATTS) PEP

f, FREQUENCY (MHz)

, POWER GAIN (dB)

930

Figure 3. Class AB Broadband Circuit Performance

out

, OUTPUT POWER (WATTS) PEP

Figure 4. Power Gain versus Output Power

Figure 5. Intermodulation Distortion versus

Output Power

935

940

945

950

955

960

out

, OUTPUT POWER (WATTS) AVG.

out

, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion Products

versus Output Power

Figure 7. Power Gain and Efficiency versus

Output Power

, POWER GAIN (dB)

IMD, INTERMODULA

TION DIST

TION (dBc)

, DRAIN EFFICIENCY

(%)

-38

-36

-34

-32

-30

-10

-18

-14

, DRAIN
h

EFFICIENCY

(%)

IMD, INTERMODULA

TION

DIST

TION (dBc)

IRL, INPUT

RETURN

LOSS (dB)

IMD

IRL

= 26 Vdc

= 450 mA

f = 945 MHz

, POWER GAIN (dB)

= 26 Vdc

out

= 60 W (PEP)

= 450 mA

100

500 mA

= 650 mA

= 26 Vdc

f1 = 945 MHz

f2 = 945.1 MHz

450 mA

275 mA

= 26 Vdc

f1 = 945 MHz

f2 = 945.1 MHz

= 275 mA

-12

-16

17.5

16.5

15.5

100

-20

-25

-30

-40

-45

-50

-60

450 mA

500 mA

650 mA

3rd Order

5th Order

7th Order

-35

-55

Two-Tone Measurement,

100 kHz Tone Spacing

= 26 Vdc

= 450 mA

f1 = 945 MHz

f2 = 945.1 MHz

MRF9060LR1 MRF9060LSR1

5-11

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

CASE 360B-05

ISSUE F

NI-360

MRF9060LR1

SEATING

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

0.795

0.805

20.19

20.45

INCHES

0.225

0.235

5.72

5.97

0.125

0.175

3.18

4.45

0.210

0.220

5.33

5.59

0.055

0.065

1.40

1.65

0.004

0.006

0.10

0.15

0.562 BSC

14.28 BSC

0.077

0.087

1.96

2.21

0.220

0.250

5.59

6.35

0.355

0.365

9.02

9.27

0.125

0.135

3.18

3.43

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

aaa

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

0.227

0.233

5.77

5.92

0.225

0.235

5.72

5.97

0.357

0.363

9.07

9.22

aaa

0.005 REF

0.13 REF

bbb

0.010 REF

0.25 REF

ccc

0.015 REF

0.38 REF

bbb

(FLANGE)

ccc

bbb

(INSULATOR)

(LID)

ccc

(LID)

(INSULATOR)

aaa

CASE 360C-05

ISSUE D

NI-360S

MRF9060LSR1

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

0.375

0.385

9.53

9.78

INCHES

0.225

0.235

5.72

5.97

0.105

0.155

2.67

3.94

0.210

0.220

5.33

5.59

0.035

0.045

0.89

1.14

0.004

0.006

0.10

0.15

0.057

1.45

0.085

0.115

2.16

2.92

0.355

0.365

9.02

9.27

SEATING

PLANE

0.067

1.70

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

0.225

0.235

5.72

5.97

aaa

0.005 REF

0.13 REF

bbb

0.010 REF

0.25 REF

ccc

0.015 REF

0.38 REF

ccc

(LID)

(INSULATOR)

aaa

bbb

(FLANGE)

ccc

bbb

(INSULATOR)

(LID)

(FLANGE)

PIN 3

0.357

0.363

9.07

9.22

0.227

0.23

5.77

5.92

5-12

RF Device Data

Freescale Semiconductor

MRF9060LR1 MRF9060LSR1

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MRF9060

Rev. 8, 12/2004

Document Number:

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF9060

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF9060