1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45
5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
0.2
0.2
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.3
0.3
+0.2
+0.3
+0.2
--0.1
0.2
3.2
ESAC83M-004R
(20A)
(40V / 20A )
Features
Insulated package by fully molding
Low V
F
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
o
I
FSM
T
j
T
stg
Conditions
Sine wave
10ms
120
-40 to +150
-40 to +150
Unit
V
V
A
A
C
C
Electrical characteristics (Ta=25C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-c)
Conditions
I
FM
=8A
V
R
=V
RRM
Junction to case
Max.
0.55
15
2.5
Unit
V
mA
C/W
tw=500ns, duty=
1/40
Square wave, duty=
1/2
Tc=99C
Rating
40
48
20*
SCHOTTKY BARRIER DIODE
Outline drawings, mm
Connection diagram
JEDEC
EIAJ
1
3
2
*
Average forward current of centertap full wave connection
ESAC83M-004R (20A)
(40V / 20A )
Characteristics
Forward characteristics
V
F
[V]
I
F
[A]
Reverse characteristics
V
R
[V]
I
R
[mA]
Reverse power dissipation
W
R
[
W
]
V
R
[V]
T
c
[
C
]
I
o
[
A
]
Output current-case temperature
W
F
[
W
]
I
o
[A]
Forward power dissipation
Junction capacitance characteristics
C
j
[pF]
V
R
[V]
0 5 10 15
5 10 30 50 100
50
30
10
5
3
1
0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
0.1
0.01
20
16
12
8
4
0
0 10 20 30 40 50
0 10 20 30 40 50 60 70
7.5
5.0
2.5
0
0 2 4 6 8 10 12 14 16 18 20
3000
1000
500
300
100
140
120
100
80
60
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