1
ET400
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Features
High voltage,High speed switching
Low saturation voltage
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency invertors
General purpose power amplifiers
Thermal characteristics
Item
Symbol Test Conditions
Min. Typ. Max. Units
R
th(j-c)
Junction to case
1.56
C/W
V
V
V
A
A
W
C
C
Item
Symbol
Ratings
Unit
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
-55 to +150
Electrical characteristics (T
c
=25C unless otherwise specified)
Min. Typ. Max. Units
V
V
V
mA
V
V
s
s
s
Symbol
V
CBO
V
CEO(SUS)
V
EBO
I
CBO
h
FE
V
CE(Sat)
V
BE(Sat)
t
on
t
stg
t
f
Test Conditions
I
CBO
= 1mA
I
C
= 200mA
I
EBO
= 1mA
V
CBO
= 500V
I
C
= 5A, V
CE
= 5V
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B1
= 1A
I
B2
= -2A, R
L
= 30 ohm
Pw = 20s Duty=<2%
500
400
7
1.0
10
1.0
1.5
0.2
0.5
1.0
1.5
0.07
0.15
Outline Drawings
TO-3PF
JEDEC (TO-3PF)
EIAJ -
Collector-Base voltage
V
CBO
Collector-Emitter voltage
V
CEO
Emitter-Base voltage
V
EBO
Collector current
I
C
Base current
I
B
Collector power disspation
P
C
Operating junction temperature
T
j
Storage temperature
T
stg
500
400
7
10
3
80
+150
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Thermal resistance
2
Characteristics
ET400
FUJI POWER TRANSISTOR
Base current I
B
[A]
Collector Output Characteristics
Collector-Emitter voltage V
CE
[V]
DC Current Gain
Collector current I
C
[A]
D.C. current gain h
FE
Base and Collector Saturation Voltage
Collector current I
C
[A]
Saturation voltage V
CE(sat),
V
BE(sat)
[V]
Safe Operating Area
Collector-Emitter voltage V
CE
[V]
Collector current I
C
[A]
Switching Time
Collector current I
C
[A]
Switching time t
on
, t
stg
, t
f
[s]
*
1
Switching Time Test Circuit
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