ChipFind - документация

Электронный компонент: 1N64xx

Скачать:  PDF   ZIP
1N6478 THRU 1N6484
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current
-
1.0 Ampere
FEATURES
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
450C/5 seconds at terminals.
Complete device submersible temperature of
265C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-213AB molded plastic over glass body
Terminals: Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
Mounting Position: Any
Weight: 0.0046 ounce, 0.116 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
1N
1N
1N
1N
1N
1N
1N
Standard recovery time device: 1st band is White
SYMBOLS 6478
6479
6480
6481
6482
6483
6484 UNITS
Polarity color bands
(2nd Band)
Gray
Red
Orange
Yellow Green
Blue
Violet
* Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
Volts
* Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
Volts
* Maximum average forward rectified current at
I
(AV)
1.0
Amp
* Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
30.0
Amps
on rated load at T
A
=75C (JEDEC Method)
* Maximum instantaneous forward voltage at 1.0A
T
A
=25C
V
F
1.1
Volts
T
A
=75C
1.0
* Maximum DC reverse current
T
A
=25C 10.0
at rated DC blocking voltage
T
A
=125C
I
R
200.0
A
* Maximum full load reverse current, full cycle
average at T
A
=75C
I
R(AV)
100.0
A
* Typical junction capacitance
(NOTE 1)
C
J
8.0
pF
* Maximum thermal resistance
(NOTE 2)
R
JA
50.0
(NOTE 3)
R
JT
20.0
C/W
* Operating junction and storage temperature range
T
J
, T
STG
-65 to +175
C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0mm) copper pads to each terminal
(3) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0mm) copper pads to each terminal
* JEDEC Registered Values
4/98
SOLDERABLE ENDS
1st BAND
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
D1=
0.105
0.095
(2.67)
(2.41)
D2 = D1 + 0
- 0.008 (0.20)
1st band denotes type and positive end (cathode)
D2
DO-213AB
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
P
A
TENTED*
2nd BAND
2nd band denotes voltage type
1
10
100
0
10
15
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
5.0
10
1
100
1
10
30
1.0
20
0
20
40
60
80
100
0.01
0.1
1
10
0.01
0.1
1
10
100
0.1
1
10
100
RATINGS AND CHARACTERISTIC CURVES 1N6478 THRU 1N6484
FIG. 1 - FORWARD CURRENT DERATING CURVE
TERMINAL TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED CURRENT
,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 H
Z
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
T
A
=75
C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=25C
TJ=25C
PULSE WIDTH=300
s
1% DUTY CYCLE
T
J
=25C
f=1.0 MH
Z
Vsig=50mVp-p
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
T
J
=100C
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT
THERMAL IMPED
ANCE (
C/W)
t, PULSE DURATION, sec
MOUNTED ON 0.20 x 0.27" (5 x 7mm)
COPPER PAD AREAS