FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
DO-35
m
i
n
.
1
.
08
3 (
2
7.
5
)
m
i
n. 1.0
8
3
(
2
7.
5)
ma
x
.
.
1
5
0
(3
.
8
)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
5/98
216
BAT48
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
40
V
Forward Continuous Current at T
amb
= 25 C
I
F
350
1)
mA
Repetitive Peak Forward Current
at t
p
< 1 s,
< 0.5, T
amb
= 25 C
I
FRM
1
1)
A
Surge Forward Current at t
p
< 10 ms, T
amb
= 25 C
I
FSM
7.5
1)
A
Power Dissipation
1)
at T
amb
= 65 C
P
tot
330
1)
mW
Junction Temperature
T
j
125
C
Ambient Operating Temperature Range
T
amb
65 to +125
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications.
These diodes feature very low
turn-on voltage and fast switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
This diode is also available in the Mini-MELF
case with type designations LL46.
.
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
217
BAT48
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 100
A Pulses
V
(BR)R
40
V
Forward Voltage
Pulse Test t
p
< 300
s,
< 2%
at I
F
= 0.1 mA
at I
F
= 10 mA
at I
F
= 250 mA
V
F
V
F
V
F
0.25
0.40
0.90
V
V
V
Leakage Current
Pulse Test t
p
< 300
s,
< 2%
at V
R
= 10 V
at V
R
= 10 V, T
j
= 60 C
at V
R
= 20 V
at V
R
= 20 V, T
j
= 60 C
at V
R
= 40 V
at V
R
= 40 V, T
j
= 60 C
I
R
I
R
I
R
I
R
I
R
I
R
2
15
5
25
25
50
A
A
A
A
A
A
Capacitance
at V
R
= 1 V, f = 1 MHz
C
tot
12
pF
Thermal Resistance Junction to Ambient Air
R
thJA
0.3
1)
K/mW
1)
Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
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