FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (PNP)
B
E
C
.181 (4.6)
mi
n. .492
(
12.5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 C
ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
Symbol
Value
Unit
Collector-Emitter Voltage
BC327
BC328
V
CES
V
CES
50
30
V
V
Collector-Emitter Voltage
BC327
BC328
V
CEO
V
CEO
45
25
V
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Peak Collector Current
I
CM
1
A
Base Current
I
B
100
mA
Power Dissipation at T
amb
= 25 C
P
tot
625
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Espe-
cially suit-able for AF-driver stages and
low-power output stages.
These types are also available subdivided
into three groups -16, -25, and -40, according
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
Current Gain Group-16
-25
-40
at V
CE
= 1 V, I
C
= 300 mA
Current Gain Group-16
-25
-40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
Thermal Resistance Junction to Ambient Air
R
thJA
200
1)
K/W
Collector-Emitter Cutoff Current
at V
CE
= 45 V
BC327
at V
CE
= 25 V
BC328
at V
CE
= 45 V, T
amb
= 125 C
BC327
at V
CE
= 25 V, T
amb
= 125 C
BC328
I
CES
I
CES
I
CES
I
CES
2
2
100
100
10
10
nA
nA
A
A
Collector-Emitter Breakdown Voltage
at I
C
= 10 mA
BC327
BC328
V
(BR)CEO
V
(BR)CEO
45
25
V
V
Collector-Emitter Breakdown Voltage
at I
C
= 0.1 mA
BC327
BC328
V
(BR)CES
V
(BR)CES
50
30
V
V
Emitter-Base Breakdown Voltage
at I
E
= 0.1 mA
V
(BR)EBO
5
V
Collector Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.7
V
Base-Emitter Voltage
at V
CE
= 1 V, I
C
= 300 mA
V
BE
1.2
V
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
f
T
100
MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
C
CBO
12
pF
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC327, BC328
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