FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
Cathode Mark
.063
(
1
.6)
.134 (3.4)
.055
(
1
.4
)
.011 (0.28)
4/98
LL4148
Symbol
Value
Unit
Reverse Voltage
V
R
75
V
Peak Reverse Voltage
V
RM
100
V
Forward DC current at T
amb
= 25 C
I
F
200
1)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 C and f
50 Hz
I
0
150
1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power Dissipation at T
amb
= 25 C
P
tot
500
1)
mW
Junction Temperature
T
j
175
C
Storage Temperature Range
T
S
65 to +175
C
1)
Valid provided that electrodes are kept at ambient temperature.
Silicon Epitaxial Planar Diodes
Fast switching diode in MiniMELF case
especially suited for automatic insertion.
This diode is also available in other case styles
including: the DO-35 case with the type designation
1N4148, the SOD-123 case with the type
designation 1N4148W, and the SOT-23
case with the type designation IMBD4148.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
LL4148
Rectification Efficiency Measurement Circuit
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I
F
= 10 mA
V
F
1
V
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150 C
I
R
I
R
I
R
25
5
50
nA
A
A
Capacitance
at V
F
= V
R
= 0
C
tot
4
pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
t
p
= 0.1
s, Rise Time < 30 ns, f
p
= 5 to 100 kHz
V
fr
2.5
V
Reverse Recovery Time
from
I
F
=
10 mA to I
R
= 1 mA,
V
R
= 6 V,
R
L
= 100
t
rr
4
ns
Thermal Resistance
Junction to Ambient Air
R
thJA
0.35
1)
K/mW
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
v
0.45
1)
Valid provided that electrodes are kept at ambient temperature.
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